GT40T301 Toshiba Semiconductor, GT40T301 Datasheet - Page 5

• Manufacturer Part Number: GT40T301
• Description: Insulated Gate Bipolar Transistor Silicon N Channel IGBT
• Manufacturer: Toshiba Semiconductor

2.5
2.0
1.5
0.5
1.0
0
10
10
10
10
10
10
1
0
1
2
3
5
20
12
16
0
8
4
0
10
4
Emitter-collector forward current I
Diode
10
I rr
t rr
20
Pulse width t
3
R
10
th (t)
2
I
rr
40
IGBT
, t
– t
10
rr
w
w
1
– I
ECF
(s)
60
10
0
Common collector
di/dt
Tc
Tc
10
ECF
25°C
25°C
1
80
20 A/ s
10
(A)
2
100
5
1.0
0.8
0.6
0.4
0.2
0
100
80
60
40
20
0
0
100
80
60
40
20
Emitter-collector forward voltage V
0
0
Tc
1
40
40°C
t rr
I rr
I
ECF
125
2
80
I
– V
di/dt (A/ s)
rr
, t
25
ECF
rr
120
3
– di/dt
Common collector
160
Common collector
I ECF
Tc
ECF
4
25°C
GT40T301
30 A
2002-01-18
(V)
200
5
240