BUL312FH STMicroelectronics, BUL312FH Datasheet

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BUL312FH

Manufacturer Part Number
BUL312FH
Description
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Manufacturer
STMicroelectronics
Datasheet

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BUL312FH
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DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high switching
speeds and high voltage capability.
It uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide R.B.S.O.A.
ABSOLUTE MAXIMUM RATINGS
August 2002
BUL312FH
Symbol
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125 °C
LARGE R.B.S.O.A.
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
HORIZONTAL DEFLECTION FOR COLOR TV
SWITCH MODE POWER SUPPLIES
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
Ordering Code
V
V
V
V
I
I
P
T
CEO
EBO
CES
I
CM
BM
I
T
isol
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Insulation Withstand Voltage (RMS) from All Three
Leads to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
BUL312FH
Marking
Parameter
c
p
= 25 °C
< 5 ms)
C
p
= 0)
< 5 ms)
B
BE
Tube
= 0)
= 0)
Shipment
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
–65 to 150
TO-220FH
Value
2500
1150
500
150
10
36
9
5
3
4
BUL312FH
Unit
°C
°C
W
V
V
V
A
A
A
A
V
1/6

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BUL312FH Summary of contents

Page 1

... Max. Operating Junction Temperature j August 2002 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Shipment Tube Parameter = < 5 ms) p < °C c BUL312FH TO-220FH INTERNAL SCHEMATIC DIAGRAM Value 1150 500 2500 –65 to 150 150 Unit ...

Page 2

... BUL312FH THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector Cut-off CEO Current ( Emitter-Base Voltage EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage ...

Page 3

... Safe Operating Area Collector-Emitter Saturation Voltage DC Current Gain Derating Curve Base-Emitter Saturation Voltage DC Current Gain BUL312FH 3/6 ...

Page 4

... BUL312FH Inductive Load Storage Time Reverse Biased Safe Operating Area Figure 1: Inductive Load Switching Test Circuit 1) Fast Electronic Switch 2) Non-Inductive Resistor 3) Fast Recovery Rectifier 4/6 Inductive Load Fall Time ...

Page 5

... L8 14.5 L9 2.4 inch MAX. MIN. TYP. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.8 0.051 1.8 0.051 5.2 0.195 2.7 0.094 10.4 0.393 0.630 30.6 1.126 10.6 0.385 0.134 16.4 0.626 9.3 0.354 15 0.570 0.094 BUL312FH MAX. 0.181 0.106 0.108 0.027 0.039 0.070 0.070 0.204 0.106 0.409 1.204 0.417 0.645 0.366 0.590 P011W 5/6 ...

Page 6

... BUL312FH Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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