BUL742

Manufacturer Part NumberBUL742
DescriptionHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
ManufacturerSTMicroelectronics
BUL742 datasheet
 


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HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
LARGE RBSOA
APPLICATIONS
ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL742 is manufactured using high voltage
Multi
Epitaxial Planar
technology for
switching speeds and high voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintening the wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-Emitter Voltage (V
CES
V
Collector-Emitter Voltage (I
CEO
V
Emitter-Base Voltage
EBO
(I
= 0, I
= 0.75 A, t
C
B
I
Collector Current
C
I
Collector Peak Current (t
CM
I
Base Current
B
I
Base Peak Current (t
BM
P
Total Dissipation at Tc = 25
tot
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
June 2001
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
high
INTERNAL SCHEMATIC DIAGRAM
= 0)
BE
= 0)
B
o
< 10 s, T
< 150
C)
p
j
<5 ms)
p
<5 ms)
p
o
C
BUL742
3
2
1
TO-220
Value
Unit
900
V
400
V
BV
V
EBO
4
A
8
A
2
A
4
A
70
W
o
-65 to 150
C
o
150
C
1/5

BUL742 Summary of contents

  • Page 1

    ... LARGE RBSOA APPLICATIONS ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL742 is manufactured using high voltage Multi Epitaxial Planar technology for switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintening the wide RBSOA ...

  • Page 2

    ... BUL742 THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Collector-Emitter CEO(sus) Sustaining Voltage ( Emitter-Base EBO Breakdown Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage ...

  • Page 3

    ... Safe Operating Areas Reverse Biased SOA Derating Curve BUL742 3/5 ...

  • Page 4

    ... BUL742 DIM. MIN. A 4.40 C 1.23 D 2.40 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.40 H2 10. 13.00 L5 2.65 L6 15.25 L7 6.20 L9 3.50 M DIA. 3.75 4/5 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 16.40 14.00 2.95 15.75 6.60 3.93 2.60 3.85 inch MIN. TYP. MAX. 0.173 0.181 0.048 0.052 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.067 0.044 0.067 0.194 0.202 0.094 0.106 0.394 0.409 ...

  • Page 5

    ... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com BUL742 5/5 ...