STD10PF06 ST Microelectronics, STD10PF06 Datasheet
STD10PF06
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STD10PF06 Summary of contents
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... Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed April 1999 STripFET Feature INTERNAL SCHEMATIC DIAGRAM = 100 di/dt 300 STD10PF06 - 10A TO-252 POWER MOSFET 3 1 DPAK TO-252 (Suffix ”T4”) Value Unit 0.27 ...
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... STD10PF06 THERMAL DATA R Thermal Resistance Junction-case thj -case R Thermal Resistance Junction-ambient thj -amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature F or Soldering Purpose l AVALANCHE CHARACTERISTICS Symbo l I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting T ...
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... Load, see fig. 5) Test Con ditions di/dt = 100 150 (see test circuit, fig. 5) Thermal Impedance STD10PF06 Min. Typ. Max. Unit Min. Typ. Max. Unit 40 ns ...
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... STD10PF06 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STD10PF06 5/8 ...
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... STD10PF06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... H 9.35 L2 0.8 L4 0.6 H DETAIL ”A” MAX. MIN. 2.4 0.086 1.1 0.035 0.23 0.001 0.9 0.025 5.4 0.204 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 10.1 0.368 1 0.023 DETAIL ”A” L4 STD10PF06 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 0.031 0.039 0068772-B 7/8 ...
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... STD10PF06 Information furnished is believed to be accurate and reliable. However, STMicroelect r onics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part i es which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice ...