TLP591B Toshiba Semiconductor, TLP591B Datasheet
TLP591B
Available stocks
Related parts for TLP591B
TLP591B Summary of contents
Page 1
... The TOSHIBA TLP591B consists of an aluminum galium arsenide infrared emitting diode optically coupled to a series connected photo−diode array in a six lead plastic DIP package. TLP591B is suitable for MOS FET gate driver. TLP591B has an internal shunt resistor to optimize switching speed. UL recognized: UL1577, file no. E67349 · Maximum Ratings (Ta = 25° ...
Page 2
... AC, 1 minute BV AC, 1 second, in oil S DC, 1 minute, in oil (Ta = 25°C) Symbol Test Condition mA 1000pF off v OUT TLP591B Max. Unit ― 85 °C Min. Typ. Max. 1.2 1.4 — — — 30 — 7 — 7 — — Min. Typ. ...
Page 3
... Ta = 25° 85° 100 3 TLP591B V Ta – I ∆ /∆ 0.3 0 Forward current I (mA – Pulse width ≤ 100µ 25℃ ...
Page 4
... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 TLP591B 000707EBC 2002-09-25 ...