SMB1W-470 Roithner LaserTechnik GmbH, SMB1W-470 Datasheet
SMB1W-470
Manufacturer Part Number
SMB1W-470
Description
High Power Led, Smd
Manufacturer
Roithner LaserTechnik GmbH
Datasheet
1.SMB1W-470.pdf
(2 pages)
TECHNICAL DATA
SMB1W-470 are InGaN High Power LEDs mounted on a cooper heat sink with a 5x5 mm SMD
package and molded with epoxy resin. On forward bias, it emits a radiation of typical 110 mW at a
peak wavelength of 470 nm.
Notes
07.04.2011
Specifications
•
•
•
•
Absolute Maximum Ratings (T
Power Dissipation
Forward Current
Pulse Forward Current *
Reverse Voltage
Thermal Resistance
Operating Temperature
Storage Temperature
Soldering Temperature *
Electro-Optical Characteristics
Forward Voltage
Pulsed Forward Current
Total Radiated Power
Brightness
Peak Wavelength
Half Width
Viewing Half Angle
• Do not view directly into the emitting area of the LED during operation!
• The above specifications are for reference purpose only and subjected to change without prior notice.
High Power LED, SMD
Total Radiated Power is measured by S3584-08
*
*
1
2
Structure: InGaN, 1W high power chip
Peak Wavelength: typ. 470 nm
Optical Output Power: typ. 100 mW
Package
duty = 1%, pulse width = 10 µs
must be completed within 5 seconds
SMD, PPA resin
Lead frame die: silver plated on copper
Lens: epoxy resin
Item
Item
1
2
Symbol
Symbol
Θ
V
P
Δλ
V
λ
I
T
T
FP
V
1/2
T
R
O
P
P
V
F
I
I
FP
opr
stg
sol
F
D
R
th
SMB1W-470
a
=25°C)
-30 … +100
I
I
-30 … +85
I
I
I
I
FP
FP
Condition
F
F
F
F
I
I
I
F
F
F
Value
= 200 mA
= 350 mA
= 200 mA
= 350 mA
1400
= 700 mA
= 700 mA
= 50 mA
= 50 mA
= 50 mA
350
700
255
10
5
SMB1W-470
Unit
K/W
mW
mA
mA
°C
°C
°C
V
Min.
-
-
-
-
-
-
-
-
-
3800
Typ.
110
360
470
±60
3.4
3.6
4.0
17
Max.
4.0
4.2
4.8
-
-
-
-
-
-
InGaN
(Unit: mm)
Unit
deg.
mW
mcd
nm
nm
V
V
1 of 2
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SMB1W-470 Summary of contents
Page 1
... TECHNICAL DATA High Power LED, SMD SMB1W-470 are InGaN High Power LEDs mounted on a cooper heat sink with a 5x5 mm SMD package and molded with epoxy resin. On forward bias, it emits a radiation of typical 110 peak wavelength of 470 nm. Specifications • Structure: InGaN, 1W high power chip • ...
Page 2
... LEDs. • All devices, equipment and machinery must be grounded properly recommended that precautions should be taken against surge voltage to the equipment that mounts the LEDs. 07.04.2011 Recommended Land Layout (Unit: mm) Soldering Conditions SMB1W-470 ...