RB481Y-90 Rohm, RB481Y-90 Datasheet

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RB481Y-90

Manufacturer Part Number
RB481Y-90
Description
Schottky barrier diode
Manufacturer
Rohm
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
RB481Y-90
Manufacturer:
ROHM
Quantity:
30 000
Diodes
Schottky barrier diode
RB481Y-90
Low current rectification
1) Ultra small mold type. (EMD4)
2) Low V
3) High reliability
Silicon epitaxial planar
R
R
A
For
Junct
S
(
F
Reverse current
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
*1) Rating of per diode
Electrical characteristic (Ta=25°C)
orward voltage
verage rectified forward current(*1)
torage temperature
everse voltage (repetitive peak)
everse voltage (DC)
ward current surge peak (60Hz・1cyc)(*1)
ion temperature
F
Parameter
Parameter
Symbol
1.65±0.1
4.0±0.1
V
I
R
F
Taping dimensions (Unit : mm)
JEITA : SC-75A Size
External dimensions (Unit : mm)
ROHM : EMD4
1PIN
2.0±0.05
0.22±0.05
dot (year week factory)
Min.
(4)
(1)
0.5
-
-
1.6±0.1
1.0±0.1
4.0±0.1
0.5
Symbol
Typ.
0.55
Tstg
20
V
I
V
FSM
(3)
Io
Tj
(2)
φ1.5±0.1
      0
RM
R
Max.
0.61
100
0.5±0.05
0.13±0.05
-40 to +125
0~0.1
Limits
Unit
µA
100
125
V
90
90
1
φ0.8±0.1
Land size figure (Unit : mm)
Structure
I
V
F
=100mA
R
=90V
EMD4
Conditions
0.7
0.05
Rev.B
Unit
1.3
mA
RB481Y-90
V
V
A
0.6
0.3±0.1
0.65±0.1
1/3

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RB481Y-90 Summary of contents

Page 1

... Limits Symbol 100 FSM 125 Tj -40 to +125 Tstg Min. Typ. Max. Unit - 0.55 0. 100 µA RB481Y-90 Land size figure (Unit : mm) 0.6 0.7 0.05 1.3 EMD4 Structure 0.3±0.1 φ0.8±0.1 0.65±0.1 Unit ℃ ℃ Conditions I =100mA F V =90V R Rev.B 1/3 ...

Page 2

... AVE:11.7ns 5 0 trr DISPERSION MAP 1000 Rth(j-a) Rth(j-c) 100 Mounted on epoxy board IM=10mA IF=100mA time 1ms 300us 10 100 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS RB481Y-90 100 f=1MHz REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 Ta=25℃ 29 f=1MHz 28 VR=0V n=10pcs AVE:21.69pF ...

Page 3

... Per diode D=t/T 0.2 VR=45V DC D=1/2 T Tj=125℃ 0.1 Sin(θ=180 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) RB481Y-90 0.3 Io Per diode D=t/T DC 0.2 VR=45V D=1/2 T Tj=125℃ 0.1 Sin(θ=180 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc) Rev ...

Page 4

... Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any ...

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