MMDF2C01HD Motorola, MMDF2C01HD Datasheet
MMDF2C01HD
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MMDF2C01HD Summary of contents
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... Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996 D N–Channel G D P–Channel G Rating Tape Width Quantity 2500 units Order this document by MMDF2C01HD/D MMDF2C01HD Motorola Preferred Device COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS R DS(on) = 0.045 OHM (N–CHANNEL) R DS(on) = 0.18 OHM (P–CHANNEL) CASE 751–05, Style 14 SO–8 ...
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... MMDF2C01HD ( unless otherwise noted) (1) ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 250 Adc) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc Vdc) Gate–Body Leakage Current ( 8.0 Vdc CHARACTERISTICS (2) ...
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... DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics 1 GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics MMDF2C01HD Min Typ Max Unit — 0.95 1.1 Vdc — 1.69 2.0 — 38 — ns — 48 — — 17 — — ...
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... MMDF2C01HD TYPICAL ELECTRICAL CHARACTERISTICS N–Channel 0. 0.06 0.05 0.04 0. GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 3. On–Resistance versus Gate–To–Source Voltage 0.050 2.7 V 0.045 0.040 4.5 V 0.035 0.030 DRAIN CURRENT (AMPS) Figure 4. On–Resistance versus Drain Current ...
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... Power MOSFETs may be safely op- erated into an inductive load; however, snubbing reduces switching losses. MMDF2C01HD P–Channel 125 DRAIN–TO–SOURCE VOLTAGE (VOLTS) ...
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... MMDF2C01HD N–Channel 2000 1600 C iss 1200 C rss 800 C oss 400 C rss GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation TOTAL CHARGE (nC) Figure 8. Gate– ...
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... In addition, power dissipation incurred from switching the diode will be less due to the shorter recovery time and lower switching losses 1.5 1 0.5 0 0.8 0.9 1 0.4 0 SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current MMDF2C01HD P–Channel 0.8 1 1.2 1.4 1.6 1.8 7 ...
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... MMDF2C01HD The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is for- ward biased. Curves are based upon maximum peak junc- tion temperature and a case temperature ( Peak ...
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... Figure 14. Diode Reverse Recovery Waveform Motorola TMOS Power MOSFET Transistor Device Data Normalized 10s. Chip 0.0175 0.0710 0.0154 F 0.0854 F 1.0E–02 1.0E–01 1.0E+00 t, TIME (s) Figure 13. Thermal Response di/ TIME 0. MMDF2C01HD 0.2706 0.5776 0.7086 0.3074 F 1.7891 F 107.55 F Ambient 1.0E+01 1.0E+02 1.0E+03 9 ...
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... MMDF2C01HD INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface 0.024 The power dissipation of the SO– ...
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... C 160 C 150 C SOLDER IS LIQUID FOR SECONDS 100 C 140 C (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES Figure 15. Typical Solder Heating Profile MMDF2C01HD STEP 6 STEP 7 VENT COOLING 205 TO 219 C PEAK AT SOLDER JOINT T MAX 11 ...
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... DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS DIM MIN MAX A 4.80 5.00 B 3.80 4.00 C 1.35 1.75 D 0.35 0.49 F 0.40 1.25 G 1.27 BSC J 0.18 0.25 K 0.10 0. 5.80 6.20 R 0.25 0.50 STYLE 14: PIN 1. N-SOURCE 2. N-GATE 3. P-SOURCE 4. P-GATE 5. P-DRAIN 6. P-DRAIN 7. N-DRAIN 8. N-DRAIN MMDF2C01HD/D ...