MMDF2C02E Motorola, MMDF2C02E Datasheet
MMDF2C02E
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MMDF2C02E Summary of contents
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... Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996 D N–Channel G D P–Channel G Rating N–Channel P–Channel Tape Width Quantity 2500 units Order this document by MMDF2C02E/D MMDF2C02E COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS R DS(on) = 0.100 OHM (N–CHANNEL) R DS(on) = 0.25 OHM (P–CHANNEL) CASE 751–05, Style 14 SO– N– ...
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... MMDF2C02E ( unless otherwise noted) (1) ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 250 Adc) Zero Gate Voltage Drain Current ( Vdc Vdc) Gate–Body Leakage Current ( Vdc CHARACTERISTICS (2) Gate Threshold Voltage ( 250 Adc) Drain– ...
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... 0.4 1.5 1. DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics 3 GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics MMDF2C02E Min Typ Max Unit — 1.0 1.4 Vdc — 1.5 2.0 — — — 17 — ...
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... MMDF2C02E TYPICAL ELECTRICAL CHARACTERISTICS N–Channel 0.6 0.5 0.4 0.3 0.2 0 GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 3. On–Resistance versus Gate–to–Source Voltage 0. 4 DRAIN CURRENT (AMPS) Figure 4. On–Resistance versus Drain Current and Gate Voltage 2 ...
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... The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to mea- sure and, consequently, is not specified. MMDF2C02E P–Channel 125 C 100 ...
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... MMDF2C02E DRAIN–TO–SOURCE DIODE CHARACTERISTICS The switching characteristics of a MOSFET body diode are very important in systems using freewheeling or commutating diode. Of particular interest are the reverse re- covery characteristics which play a major role in determining switching losses, radiated noise, EMI and RFI. ...
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... STARTING JUNCTION TEMPERATURE ( C) Figure 9. Maximum Avalanche Energy versus MMDF2C02E P–Channel Mounted on 2” sq. FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10s max 100 DS(on) LIMIT THERMAL LIMIT ...
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... MMDF2C02E 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E–05 1.0E–04 1.0E–03 Figure 11. Diode Reverse Recovery Waveform 8 Chip 0.0175 0.0710 0.0154 F 0.0854 F 1.0E–02 1.0E–01 1.0E+00 t, TIME (s) Figure 10. Thermal Response di/ 0. Motorola TMOS Power MOSFET Transistor Device Data Normalized 10s. ...
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... Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. MMDF2C02E 150 C – 2.0 Watts 62.5 C/W 9 ...
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... MMDF2C02E For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next ...
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... PACKAGE DIMENSIONS CASE 751–05 SO–8 ISSUE P MMDF2C02E NOTES: 1. DIMENSIONS A AND B ARE DATUMS AND DATUM SURFACE. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3. DIMENSIONS ARE IN MILLIMETER. 4. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. ...
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... JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 *MMDF2C02E/D* Motorola TMOS Power MOSFET Transistor Device Data MMDF2C02E/D ...