MMDF2C02HD Motorola, MMDF2C02HD Datasheet
MMDF2C02HD
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MMDF2C02HD Summary of contents
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... Motorola, Inc. 1996 D N–Channel G D P–Channel G Rating N–Channel P–Channel Tape Width Quantity 2500 units Order this document by MMDF2C02HD/D MMDF2C02HD Motorola Preferred Device COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS R DS(on) = 0.090 OHM (N–CHANNEL) R DS(on) = 0.160 OHM (P–CHANNEL) CASE 751–05, Style 14 SO–8 S ...
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... MMDF2C02HD ( unless otherwise noted) (1) ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 250 Adc) Zero Gate Voltage Drain Current ( Vdc Vdc) Gate–Body Leakage Current ( Vdc CHARACTERISTICS (2) Gate Threshold Voltage ( 250 Adc) Drain– ...
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... 2 0.2 1.4 1.6 1 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics – 2.6 3 3.4 1.0 MMDF2C02HD Min Typ Max Unit — 0.79 1.3 Vdc — 1.5 2.1 — 23 — ns — 38 — — 18 — — 17 — — 5.0 — — ...
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... MMDF2C02HD TYPICAL ELECTRICAL CHARACTERISTICS N–Channel 0 1 0.4 0 GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 3. On–Resistance versus Gate–To–Source Voltage 0. 4 0.06 0. DRAIN CURRENT (AMPS) Figure 4. On–Resistance versus Drain Current and Gate Voltage 1 ...
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... Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely op- erated into an inductive load; however, snubbing reduces switching losses. MMDF2C02HD P–Channel 125 C 100 ...
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... MMDF2C02HD N–Channel 1400 1200 C iss 1000 800 C rss 600 400 200 C rss GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (Volts) Figure 7. Capacitance Variation TOTAL GATE CHARGE (nC) Figure 8. Gate– ...
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... In addition, power dissipation incurred from switching the diode will be less due to the shorter recovery time and lower switching losses. 2 1.6 1.2 0.8 0.4 0 0.75 0.80 0.5 0 SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current MMDF2C02HD P–Channel 0.9 1.1 1.3 1.5 7 ...
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... MMDF2C02HD The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is for- ward biased. Curves are based upon maximum peak junc- tion temperature and a case temperature ( Peak ...
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... Figure 13. Maximum Avalanche Energy versus Starting Junction Temperature Normalized 10s. Chip 0.0175 0.0710 0.0154 F 0.0854 F 1.0E–02 1.0E–01 1.0E+00 t, TIME (s) Figure 14. Thermal Response di/ TIME 0. MMDF2C02HD P–Channel 100 125 150 0.2706 0.5776 0.7086 0.3074 F 1.7891 F 107.55 F Ambient 1.0E+01 1.0E+02 1.0E+03 9 ...
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... MMDF2C02HD INFORMATION FOR USING THE SO–8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface 0.024 The power dissipation of the SO– ...
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... C 160 C 150 C SOLDER IS LIQUID FOR SECONDS 100 C 140 C (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES Figure 16. Typical Solder Heating Profile MMDF2C02HD STEP 6 STEP 7 VENT COOLING 205 TO 219 C PEAK AT SOLDER JOINT T MAX 11 ...
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... DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS DIM MIN MAX A 4.80 5.00 B 3.80 4.00 C 1.35 1.75 D 0.35 0.49 F 0.40 1.25 G 1.27 BSC J 0.18 0.25 K 0.10 0. 5.80 6.20 R 0.25 0.50 STYLE 14: PIN 1. N-SOURCE 2. N-GATE 3. P-SOURCE 4. P-GATE 5. P-DRAIN 6. P-DRAIN 7. N-DRAIN 8. N-DRAIN MMDF2C02HD/D ...