MMDF2C03HD ON Semiconductor, MMDF2C03HD Datasheet

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MMDF2C03HD

Manufacturer Part Number
MMDF2C03HD
Description
Power MOSFET
Manufacturer
ON Semiconductor
Datasheet

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MMDF2C03HD
Power MOSFET
2 Amps, 30 Volts
Complementary SO−8, Dual
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain-to-source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc-dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Negative signs for P−Channel device omitted for clarity.
2. Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 7
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current − Continuous
Drain Current
Operating and Storage Temperature Range
Total Power Dissipation @ T
Thermal Resistance, Junction−to−Ambient
(Note 2)
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
(V
Max Lead Temperature for Soldering, 0.0625″
from case. Time in Solder Bath is 10 seconds
These miniature surface mount MOSFETs feature ultra low R
Ultra Low R
Logic Level Gate Drive − Can Be Driven by Logic ICs
Miniature SO-8 Surface Mount Package − Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I
Avalanche Energy Specified
Mounting Information for SO-8 Package Provided
Pb−Free Package is Available
L = 8.0 mH, R
L = 18 mH, R
one die operating, 10 sec. max.
DD
DD
DSS
= 30 V, V
= 30 V, V
Specified at Elevated Temperature
− Pulsed
GS
GS
G
DS(on)
G
= 25 W)
= 25 W)
= 5.0 V, Peak I
= 5.0 V, Peak I
Rating
J
= 25°C
Provides Higher Efficiency and Extends Battery Life
(T
J
A
= 25°C unless otherwise noted) (Note 1)
= 25°C (Note 2)
Preferred Device
L
L
N−Channel
N−Channel
N−Channel
P−Channel
P−Channel
P−Channel
= 9.0 Apk,
= 6.0 Apk,
Symbol
T
V
R
J
V
E
I
P
, T
T
DSS
DM
I
qJA
GS
AS
D
D
L
stg
− 55 to 150
Value
± 20
62.5
324
324
260
4.1
3.0
2.0
30
21
15
1
DS(on)
°C/W
Unit
Vdc
Vdc
mJ
°C
°C
W
A
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MMDF2C03HDR2
MMDF2C03HDR2G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
8
G
R
R
N−Source
P−Source
DS(on)
(Note: Microdot may be in either location)
DS(on)
Device
N−Gate
P−Gate
2 AMPERES, 30 VOLTS
1
ORDERING INFORMATION
N−Channel
D2C03 = Device Code
A
Y
WW
G
D
http://onsemi.com
= 200 mW (P-Channel)
PIN ASSIGNMENT
= 70 mW (N-Channel)
S
CASE 751
STYLE 14
= Assembly Location
= Year
= Work Week
= Pb−Free Package
SO−8
(Pb−Free)
1
2
3
4
Package
SO−8
SO−8
Publication Order Number:
G
8
7
6
5
2500 Tape & Reel
2500 Tape & Reel
MMDF2C03HD/D
P−Channel
8
1
N−Drain
N−Drain
P−Drain
P−Drain
MARKING
DIAGRAM
Shipping
D
AYWWG
D2C03
G
S

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MMDF2C03HD Summary of contents

Page 1

... Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT N−Drain 1 8 N−Gate 2 7 N−Drain P−Source P−Drain P−Gate P−Drain ORDERING INFORMATION Device Package Shipping SO−8 2500 Tape & Reel SO−8 2500 Tape & Reel (Pb−Free) Publication Order Number: MMDF2C03HD/D † ...

Page 2

... DS Gate−Drain Charge ( Negative signs for P−Channel device omitted for clarity. 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature. MMDF2C03HD (T = 25°C unless otherwise noted) (Note 3) A Symbol V (BR)DSS I DSS ...

Page 3

... Figure 1. On−Region Characteristics 6 ≥ 100° − 55° 2 GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2. Transfer Characteristics MMDF2C03HD continued (T = 25°C unless otherwise noted) (Note 6) A Symbol = 25° Vdc Vdc /dt = 100 A/ms ...

Page 4

... I , DRAIN CURRENT (AMPS) D Figure 4. On−Resistance versus Drain Current and Gate Voltage 2 1 1.5 1.0 0.5 0 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature MMDF2C03HD 0 25°C J 0.5 0.4 0.3 0 25°C J 0.25 0.20 0.15 0. ...

Page 5

... G iss GG GG GSP d(off) G iss GG GSP MMDF2C03HD 1000 V GS 100 POWER MOSFET SWITCHING The capacitance ( voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET ...

Page 6

... 25°C J 100 t d(off d(on GATE RESISTANCE (OHMS) G Figure 9. Resistive Switching Time Variation versus Gate Resistance MMDF2C03HD 1200 25° iss 1000 800 C rss 600 C iss 400 C oss 200 C rss ...

Page 7

... V , SOURCE−TO−DRAIN VOLTAGE (VOLTS) SD Figure 10. Diode Forward Voltage versus Current MMDF2C03HD high di/dts. The diode’s negative di/dt during t controlled by the device clearing the stored charge. However, the positive di/dt during t diode characteristic and is usually the culprit that induces current ringing. Therefore, when comparing diodes, the ...

Page 8

... Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with one die operating, 10s max. 0.01 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 12. Maximum Rated Forward Biased Safe Operating Area MMDF2C03HD di/dt = 300 A/ms Standard Cell Density t rr High Cell Density ...

Page 9

... Starting Junction Temperature TYPICAL ELECTRICAL CHARACTERISTICS 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E−05 1.0E−04 1.0E− Figure 15. Diode Reverse Recovery Waveform MMDF2C03HD 350 300 250 200 150 100 50 0 125 150 STARTING JUNCTION TEMPERATURE (°C) J Figure 13. Maximum Avalanche Energy versus Starting Junction Temperature Normalized to qja at 10s ...

Page 10

... S 5.80 6.20 0.228 0.244 STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN mm SCALE 6:1 inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MMDF2C03HD ...

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