MMDF2C03HD ON Semiconductor, MMDF2C03HD Datasheet
MMDF2C03HD
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MMDF2C03HD Summary of contents
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... Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT N−Drain 1 8 N−Gate 2 7 N−Drain P−Source P−Drain P−Gate P−Drain ORDERING INFORMATION Device Package Shipping SO−8 2500 Tape & Reel SO−8 2500 Tape & Reel (Pb−Free) Publication Order Number: MMDF2C03HD/D † ...
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... DS Gate−Drain Charge ( Negative signs for P−Channel device omitted for clarity. 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature. MMDF2C03HD (T = 25°C unless otherwise noted) (Note 3) A Symbol V (BR)DSS I DSS ...
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... Figure 1. On−Region Characteristics 6 ≥ 100° − 55° 2 GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2. Transfer Characteristics MMDF2C03HD continued (T = 25°C unless otherwise noted) (Note 6) A Symbol = 25° Vdc Vdc /dt = 100 A/ms ...
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... I , DRAIN CURRENT (AMPS) D Figure 4. On−Resistance versus Drain Current and Gate Voltage 2 1 1.5 1.0 0.5 0 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature MMDF2C03HD 0 25°C J 0.5 0.4 0.3 0 25°C J 0.25 0.20 0.15 0. ...
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... G iss GG GG GSP d(off) G iss GG GSP MMDF2C03HD 1000 V GS 100 POWER MOSFET SWITCHING The capacitance ( voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET ...
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... 25°C J 100 t d(off d(on GATE RESISTANCE (OHMS) G Figure 9. Resistive Switching Time Variation versus Gate Resistance MMDF2C03HD 1200 25° iss 1000 800 C rss 600 C iss 400 C oss 200 C rss ...
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... V , SOURCE−TO−DRAIN VOLTAGE (VOLTS) SD Figure 10. Diode Forward Voltage versus Current MMDF2C03HD high di/dts. The diode’s negative di/dt during t controlled by the device clearing the stored charge. However, the positive di/dt during t diode characteristic and is usually the culprit that induces current ringing. Therefore, when comparing diodes, the ...
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... Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with one die operating, 10s max. 0.01 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 12. Maximum Rated Forward Biased Safe Operating Area MMDF2C03HD di/dt = 300 A/ms Standard Cell Density t rr High Cell Density ...
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... Starting Junction Temperature TYPICAL ELECTRICAL CHARACTERISTICS 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E−05 1.0E−04 1.0E− Figure 15. Diode Reverse Recovery Waveform MMDF2C03HD 350 300 250 200 150 100 50 0 125 150 STARTING JUNCTION TEMPERATURE (°C) J Figure 13. Maximum Avalanche Energy versus Starting Junction Temperature Normalized to qja at 10s ...
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... S 5.80 6.20 0.228 0.244 STYLE 14: PIN 1. N−SOURCE 2. N−GATE 3. P−SOURCE 4. P−GATE 5. P−DRAIN 6. P−DRAIN 7. N−DRAIN 8. N−DRAIN mm SCALE 6:1 inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MMDF2C03HD ...