MMDF2N02E Motorola, MMDF2N02E Datasheet

MMDF2N02E

Manufacturer Part Number

MMDF2N02E

Description

DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS

Manufacturer

Motorola

Datasheet

1.MMDF2N02E.pdf (10 pages)

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Designer's

Medium Power Surface Mount Products

TMOS Dual N-Channel

Field Effect Transistors

which utilize Motorola’s TMOS process. These miniature surface

mount MOSFETs feature ultra low R DS(on) and true logic level

performance. They are capable of withstanding high energy in the

avalanche and commutation modes and the drain–to–source diode

has a low reverse recovery time. MiniMOS devices are designed

for use in low voltage, high speed switching applications where

power efficiency is important. Typical applications are dc–dc

converters, and power management in portable and battery

powered products such as computers, printers, cellular and

cordless phones. They can also be used for low voltage motor

controls in mass storage products such as disk drives and tape

drives. The avalanche energy is specified to eliminate the

guesswork in designs where inductive loads are switched and offer

additional safety margin against unexpected voltage transients.

(1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s, E–FET and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

REV 5

MAXIMUM RATINGS

DEVICE MARKING

Motorola TMOS Power MOSFET Transistor Device Data

Drain–to–Source Voltage

Gate–to–Source Voltage — Continuous

Drain Current — Continuous @ T A = 25 C

Drain Current

Total Power Dissipation @ T A = 25 C (1)

Operating and Storage Temperature Range

Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C

Thermal Resistance, Junction to Ambient (1)

Maximum Lead Temperature for Soldering Purposes, 0.0625 from case for 10 seconds

F2N02

MMDF2N02ER2

MiniMOS

Motorola, Inc. 1996

Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life

Logic Level Gate Drive — Can Be Driven by Logic ICs

Miniature SO–8 Surface Mount Package — Saves Board Space

Diode Is Characterized for Use In Bridge Circuits

I DSS Specified at Elevated Temperatures

Avalanche Energy Specified

Mounting Information for SO–8 Package Provided

(V DD = 20 Vdc, V GS = 10 Vdc, Peak I L = 9.0 Apk, L = 6.0 mH, R G = 25 )

Device

devices are an advanced series of power MOSFETs

— Continuous @ T A = 100 C

— Single Pulse (t p

(T J = 25 C unless otherwise noted)

Reel Size

ORDERING INFORMATION

Data Sheet

10 s)

12 mm embossed tape

Tape Width

Rating

Quantity

2500

Symbol

T J , T stg

V DSS

R JA

Source–1

Source–2

MMDF2N02E

V GS

E AS

I DM

P D

T L

I D

Gate–1

Gate–2

DUAL TMOS MOSFET

CASE 751–05, Style 11

R DS(on) = 0.1 OHM

3.6 AMPERES

25 VOLTS

– 55 to 150

Order this document

Top View

SO–8

Value

62.5

by MMDF2N02E/D

245

260

3.6

2.5

2.0

Drain–1

Drain–2

Unit

Vdc

Adc

Apk

C/W

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