MMBT2907A-NL Fairchild Semiconductor, MMBT2907A-NL Datasheet

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MMBT2907A-NL

Manufacturer Part Number
MMBT2907A-NL
Description
Pn2907a / Mmbt2907a / Pzt2907a Pnp General Purpose Amplifier
Manufacturer
Fairchild Semiconductor
Datasheet
1998 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
D
Symbol
C
JC
JA
J
CEO
CBO
EBO
Thermal Characteristics
Absolute Maximum Ratings*
, T
*
*
**
PNP General Purpose Amplifier
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
C
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
stg
B
PN2907A
E
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Derate above 25 C
TO-92
Characteristic
Parameter
T
A
MMBT2907A
= 25°C unless otherwise noted
SOT-23
Mark: 2F
T
C
A
= 25°C unless otherwise noted
PN2907A
B
83.3
625
200
5.0
E
*MMBT2907A
2
.
Max
350
357
2.8
-55 to +150
Value
PZT2907A
SOT-223
800
5.0
60
60
C
**PZT2907A
1,000
125
8.0
B
Units
C
mA
V
V
V
C
mW/ C
Units
E
mW
C/W
C/W

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MMBT2907A-NL Summary of contents

Page 1

... Device mounted on FR-4 PCB 1.5 mm; mounting pad for the collector lead min 1998 Fairchild Semiconductor Corporation MMBT2907A SOT-23 Mark 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A PN2907A *MMBT2907A 625 5.0 83.3 200 PZT2907A SOT-223 Value Units ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Base Cutoff Current B I Collector Cutoff Current CEX I Collector Cutoff Current CBO ON CHARACTERISTICS h DC ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 25 °C 200 100 - 40 °C 0 0.1 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...

Page 4

Typical Characteristics Switching Times vs Collector Current 250 200 150 100 100 I - COLLECTOR ...

Page 5

Typical Common Emitter Characteristics Common Emitter Characteristics 0.5 0.2 0 COLLECTOR CURRENT (mA) C Common Emitter Characteristics 1 -10mA 1.4 V 1.3 1.2 1.1 h ...

Page 6

Test Circuits 0 200ns FIGURE 1: Saturated Turn-On Switching Time Test Circuit NOTE 5.0 V EBO 0 200ns FIGURE 2: Saturated Turn-Off Switching Time Test Circuit PNP General Purpose Amplifier 1 1.5 V ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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