MMBT3904-NL Fairchild Semiconductor, MMBT3904-NL Datasheet

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MMBT3904-NL

Manufacturer Part Number
MMBT3904-NL
Description
2n3904/mmbt3904/pzt3904 Npn General Purpose Amplifier
Manufacturer
Fairchild Semiconductor
Datasheet
2001 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
JC
JA
Absolute Maximum Ratings*
, T
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
*
**
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.
*
C
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
stg
B
E
2N3904
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Derate above 25 C
TO-92
Characteristic
Parameter
T
MMBT3904
SOT-23
A
Mark: 1A
= 25°C unless otherwise noted
C
T
A
= 25°C unless otherwise noted
B
2N3904
83.3
625
200
5.0
E
*MMBT3904
2
.
Max
350
357
2.8
-55 to +150
Value
SOT-223
PZT3904
200
6.0
40
60
C
**PZT3904
1,000
2N3904/MMBT3904/PZT3904, Rev A
125
8.0
B
Units
C
mA
V
V
V
C
mW/ C
Units
E
mW
C/W
C/W

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MMBT3904-NL Summary of contents

Page 1

... Fairchild Semiconductor Corporation MMBT3904 C E SOT-23 B Mark 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A 2N3904 625 5.0 83.3 200 PZT3904 SOT-223 Value Units 6.0 V 200 mA -55 to +150 C Max Units *MMBT3904 **PZT3904 350 1,000 mW 2.8 8.0 mW/ C C/W 357 125 C 2N3904/MMBT3904/PZT3904, Rev A ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Base Cutoff Current BL I Collector Cutoff Current CEX ON CHARACTERISTICS Current Gain FE V Collector-Emitter ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 25 °C 200 - 40 °C 100 0 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...

Page 4

Typical Characteristics Noise Figure vs Frequency 1 200 1 0 200 ...

Page 5

Typical Characteristics Storage Time vs Collector Current 500 T = 25°C J 100 T = 125° COLLECTOR CURRENT (mA) C Current Gain 500 100 10 0 COLLECTOR CURRENT (mA) C ...

Page 6

Test Circuits 300 ns Duty Cycle 0.5 V 1.0 ns FIGURE 1: Delay and Rise Time Equivalent Test Circuit 500 Duty Cycle 9.1 V FIGURE 2: Storage and ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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