MMBD4448-NL Fairchild Semiconductor, MMBD4448-NL Datasheet
MMBD4448-NL
Manufacturer Part Number
MMBD4448-NL
Description
Mmbd4448 High Conductance Fast Diode
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBD4448-NL.pdf
(5 pages)
Electrical Characteristics
SYM
© 1997 Fairchild Semiconductor Corporation
B
V
T
General Description:
The high breakdown voltage, fast switching speed and high
forward conductance of this diode packaged in a SOT-23
Surface Mount package makes it desirable also as a general
purpose diode.
V
High Conductance
Fast Diode
I
C
Absolute Maximum Ratings*
Sym
R
RR
V
F
FM
T
T
T
P
R
W
I
I
i
i
f
F(surge)
O
F
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
stg
J
D
OJA
iv
Breakdown Voltage
Reverse Leakage
Forward Voltage
Capacitance
Reverse Recovery Time
Peak Forward Recovery Voltage
CONNECTION DIAGRAMS
Storage Temperature
Operating Junction Temperature
Total Power Dissipation at T
Linear Derating Factor from T
Thermal Resistance Junction-to-Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current (I
Recurrent Peak Forward Current (I
Peak Forward Surge Current (I
CHARACTERISTICS
75
1
3
2 NC
F
)
TA = 25
A
A
= 25
FSM
= 25
O
) Pulse Width = 1.0 second
MMBD4448
F
Parameter
O
C
O
)
C unless otherwise noted
Pulse Width = 1.0 microsecond
C
TA = 25
MIN
100
620
O
C unless otherwise noted
MAX
720
Features:
• 350 milliwatt Power Dissipation package.
• High Breakdown Voltage, Fast Switching Speed.
• Typical capacitance less than 1.5 picofarad.
Ordering:
• 7 inch reel (178 mm); 8 mm Tape; 3,000 units per reel.
5.0
1.0
2.0
4.0
2.5
25
50
Top Mark: RAB
UNITS
TO-236AB (Low)
mV
nA
uA
uA
V
V
V
pF
ns
V
PACKAGE
I
I
V
V
V
I
I
V
I
I
I
R
R
F
F
F
RR
F
R
R
R
R
DISCRETE POWER AND SIGNAL
-55 to +150
-55 to +150
Value
TEST CONDITIONS
= 100 uA
=
=
=
=
=
= 100 mA
=
= 10 mA I
= 1.0 Ma, R
= 50 mA Pk Square Wave
350
357
200
600
700
2.8
1.0
2.0
75
5.0 uA
0.0 V, f = 1.0 MHz
20 V
20 V T
75 V
TECHNOLOGIES
5 mA
1
R
= 10 mA
A
L
= 150 Deg C
= 100 ohms
3
Units
mW/
Revision A; November 10, 1998
O
C/W
mA
mA
mA
O
O
W
Amp
Amp
V
C
C
O
C
2
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MMBD4448-NL Summary of contents
Page 1
... Reverse Recovery Time RR V Peak Forward Recovery Voltage FM © 1997 Fairchild Semiconductor Corporation MMBD4448 Features: • 350 milliwatt Power Dissipation package. • High Breakdown Voltage, Fast Switching Speed. • Typical capacitance less than 1.5 picofarad. Ordering: • 7 inch reel (178 mm Tape; 3,000 units per reel. ...
Page 2
LOW PROFILE 0.0040 (0.102) (49) 0.0005 (0.013) TO-236AB (L 0.019 (0.483) 0.015 (0.381 CHARACTERS MAX 2 0.080 (2.032) 0.070 (1.778) 0.120 (3.048) 0.110 (2.794) 0.0059 (0.150) 0.0035 (0.089) SOT-23 ...
Page 3
M INIMUM (3.048) 0.035” T (0.889) R YPICAL S ECOMMENDED OLDER FOR SOT-23 DISCRETE POWER AND SIGNAL TECHNOLOGIES 0.030” +/- 0.005” (0.762 +/- 0.127) 0.060” +/- 0.005” (1.524 +/- 0.127) P ADS ...
Page 4
R S ECOMMENDED OLDER FOR U.S. & European SOT-23 & Japanese SC-59 DISCRETE POWER AND SIGNAL TECHNOLOGIES 0.031” +/- 0.005” (0.800 +/- 0.127) 0.039” +/- 0.005” ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...