ST2301A Stanson Technology, ST2301A Datasheet
ST2301A
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ST2301A Summary of contents
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... DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required ...
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... P Channel Enhancement Mode MOSFET Parameter T =25℃ =70 ℃ =25℃ =70 ℃ A ST2301A -3.0A Symbol Typical Unit V -20 V DSS V ± GSS -3 -2 0.8 T 150 ℃ -55/150 ℃ STG ℃ 120 θ JA ST2301A 2005. V1 ...
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... GS F=1MH C z rss V =- d(on Ω =- =-4.5V t GEN d(off Ω ST2301A -3.0A Min Typ Max Unit -20 V -1.5 V -0.45 ± 100 - 0.080 Ω 0.120 6.5 S -0.8 -1.2 V 5.8 10 0.85 nC 1.7 415 223 ST2301A 2005. V1 ...
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... TYPICAL CHARACTERICTICS (25 ℃ Unless noted) www.DataSheet4U.com STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301A P Channel Enhancement Mode MOSFET ST2301A 2005. V1 -3.0A ...
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... TYPICAL CHARACTERICTICS (25 ℃ Unless noted) www.DataSheet4U.com STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301A P Channel Enhancement Mode MOSFET ST2301A 2005. V1 -3.0A ...
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... SOT-23 PACKAGE OUTLINE www.DataSheet4U.com STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2301A P Channel Enhancement Mode MOSFET ST2301A 2005. V1 -3.0A ...