ST2304 Stanson Technology, ST2304 Datasheet
ST2304
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ST2304 Summary of contents
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... N Channel Enchancement Mode MOSFET 2.5A DESCRIPTION The ST2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package ...
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... Continuous Drain Current (TJ=150 ℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 ST2304 Symbol V DSS V GSS I =25℃ =70 ℃ ...
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... Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 ST2304 Symbol Condition V V =0V,I =250uA (BR)DSS ...
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... N Channel Enchancement Mode MOSFET 2.5A SOT-23-3L PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 ST2304 Page4 ...
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... N Channel Enchancement Mode MOSFET 2.5A TYPICAL CHARACTERICTICS (25 ℃ Unless noted) ST2304 Page 5 ...
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... N Channel Enchancement Mode MOSFET 2.5A TYPICAL CHARACTERICTICS (25 ℃ Unless noted) ST2304 Page 6 ...