ST2305A Stanson Technology, ST2305A Datasheet
ST2305A
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ST2305A Summary of contents
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... DESCRIPTION ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required ...
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... P Channel Enhancement Mode MOSFET Parameter T =25℃ =70 ℃ =25℃ =70 ℃ A ST2305A -3.5A Symbol Typical Unit V -15 V DSS ± GSS -3 -2 0.8 T 150 ℃ -55/150 ℃ STG ℃ 120 θ JA ST2305A 2005. V1 ...
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... F=1MH C z rss V =-10V t DD d(on Ω =-1. =-4.5V t GEN d(off Ω ST2305A -3.5A Min Typ Max Unit -15 V -0.3 -1.5 V ± 100 - 0.045 0.055 Ω 0.09 8.5 S -0.8 -1 485 ST2305A 2005. V1 ...
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... TYPICAL CHARACTERICTICS (25 ℃ Unless noted) www.DataSheet4U.com STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2305A P Channel Enhancement Mode MOSFET ST2305A 2005. V1 -3.5A ...
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... TYPICAL CHARACTERICTICS (25 ℃ Unless noted) www.DataSheet4U.com STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2305A P Channel Enhancement Mode MOSFET ST2305A 2005. V1 -3.5A ...
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... SOT-23-3L PACKAGE OUTLINE www.DataSheet4U.com STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2305A P Channel Enhancement Mode MOSFET ST2305A 2005. V1 -3.5A ...