CMPA0060005F Cree, Inc., CMPA0060005F Datasheet

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CMPA0060005F

Manufacturer Part Number
CMPA0060005F
Description
5 W, 20 Mhz - 6000 Mhz, Gan Mmic Power Amplifer
Manufacturer
Cree, Inc.
Datasheet
Typical Performance Over 20 MHz - 6.0 GHz
Note
Note
CMPA0060005F
5 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA0060005F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs
also offer greater power density and wider bandwidths compared
to Si and GaAs transistors. This MMIC employs a distributed
(traveling-wave) amplifier design approach, enabling extremely
wide bandwidths to be achieved in a small footprint screw-down
package featuring a copper-tungsten heat sink.
Features
U.S. Department of Commerce Export License May Be Required.
Parameter
Gain
Saturated Output Power, P
Power Gain @ P
PAE @ P
1
2
: P
: V
SAT
DD
17 dB Small Signal Gain
5 W Typical P
Operation up to 48 V
High Breakdown Voltage
High Temperature Operation
~0.5” x 0.5” total product size
OUT
= 48 V, I
is defined as the RF output power where the device starts to draw positive gate current in the range of 2-4 mA.
37 dBm
OUT
D
37 dBm
= 100 mA
SAT
SAT
1
20 MHz
19.8
17.8
8.1
23
PRELIMINARY
0.5 GHz
Subject to change without notice.
18.5
16.4
7.3
20
www.cree.com/wireless
Applications
.0 GHz
17.8
15.6
7.7
20
Ultra Broadband Amplifiers
Fiber Drivers
Test Instrumentation
EMC Amplifier
Drivers
2.0 GHz
16.7
14.7
(T
7.9
20
C
= 25˚C)
3.0 GHz
16.5
13.5
5.1
17
4.0 GHz
18.1
14.3
5.9
20
5.0 GHz
17.0
13.5
6.9
19
6.0 GHz
18.9
13.6
5.7
24
Units
dB
dB
W
%


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CMPA0060005F Summary of contents

Page 1

... CMPA0060005F MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060005F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity ...

Page 2

... Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CMPA0060005F Rev 0.2, Preliminary Symbol V DSS ...

Page 3

... Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CMPA0060005F Rev 0.2, Preliminary Small Signal Gain and Return Losses 0 24 ...

Page 4

... Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CMPA0060005F Rev 0.2, Preliminary Frequency P SAT (GHz) 0 ...

Page 5

... The wideband amplifier’s input and output are internally matched to 50 Ohm. The amplifier requires bias from appropriate Bias-T’s, through the RF input and output ports. The CMPA0060005F is provided in a flange package format. The input and output connections are gold plated to enable gold bond wire attach at the next level assembly. ...

Page 6

... CMPA0060005F-TB Demonstration Amplifier Circuit CMPA0060005F-TB Demonstration Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association ...

Page 7

... Designator J1, Notes The CMPA0060005F is connected to the PCB with 2.0 mil Au bond wires external bias T is required. 2 Product Dimensions CMPA0060005F (Package Type — 780019) Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 8

... Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CMPA0060005F Rev 0.2, Preliminary Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1 ...

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