RFM10N45 Intersil Corporation, RFM10N45 Datasheet

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RFM10N45

Manufacturer Part Number
RFM10N45
Description
10A/ 450V and 500V/ 0.600 Ohm/ N-Channel Power MOSFETs
Manufacturer
Intersil Corporation
Datasheet
September 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Features
• 10A, 450V and 500V
• r
Ordering Information
NOTE: When ordering, include the entire part number.
Packaging
RFM10N45
RFM10N50
DS(ON)
PART NUMBER
©
Harris Corporation 1998
Semiconductor
= 0.600
TO-204AA
TO-204AA
PACKAGE
DRAIN
(FLANGE)
RFM10N45
RFM10N50
GATE (PIN 1)
BRAND
JEDEC TO-204AA
5-1
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA17435.
Symbol
SOURCE (PIN 2)
10A, 450V and 500V, 0.600 Ohm,
N-Channel Power MOSFETs
G
RFM10N45,
RFM10N50
D
S
File Number
1788.1

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RFM10N45 Summary of contents

Page 1

... These types can be operated directly from integrated cir- cuits. BRAND Formerly developmental type TA17435. RFM10N45 RFM10N50 Symbol JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 5-1 RFM10N45, RFM10N50 N-Channel Power MOSFETs 1788.1 File Number ...

Page 2

... Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTE: 2. Pulse test: pulse width 300 s, duty cycle 3. Repetitive rating: pulse width is limited by maximum junction temperature. RFM10N45, RFM10N50 Unless Otherwise Specified DSS DGR ...

Page 3

... T = MAX RATED MAX CONTINUOUS D 10 OPERATION IN THIS AREA MAY BE LIMITED BY r DS(ON (MAX) = 450V (RFM10N45) DSS V (MAX) = 500V (RFM10N50) DSS 0 DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 25V DS PULSE DURATION = ...

Page 4

... C ISS 2000 C OSS 1000 DRAIN TO SOURCE VOLTAGE (V) DS, FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms FIGURE 11. SWITCHING TIME TEST CIRCUIT RFM10N45, RFM10N50 Unless Otherwise Specified (Continued) 1 250mA D 1 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 150 200 o C) FIGURE 8 ...

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