FP2189-RFID WJ Communications, FP2189-RFID Datasheet

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FP2189-RFID

Manufacturer Part Number
FP2189-RFID
Description
1 - Watt HFET
Manufacturer
WJ Communications
Datasheet
FP2189
1 - Watt HFET
Product Features
Applications
Specifications
1. I
2. Pinch-off voltage is measured when I
3. Test conditions unless otherwise noted: T = 25ºC, V
4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
Absolute Maximum Rating
Operation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc
DC Parameter
Saturated Drain Current, I
Transconductance, G
Pinch Off Voltage, V
RF Parameter
Frequency Range
Test Frequency
Small Signal Gain
SS Gain (50
Maximum Stable Gain
Output P1dB
Output IP3
Noise Figure
Drain Bias
Parameter
Operating Case Temperature
Storage Temperature
DC Power
RF Input Power (continuous)
Drain to Gate Voltage, V
Junction Temperature
50 – 4000 MHz
+30 dBm P1dB
+43 dBm Output IP3
High Drain Efficiency
18.5 dB Gain @ 900 MHz
Lead-free/Green/
compliant
MTTF >100 Years
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
with Z
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
dss
is measured with V
L
= Z
LOPT
SOT-89 Package
, Z
(4)
S
= Z
, unmatched)
gs
SOPT
= 0 V, V
RoHS-
Phone 1-800- WJ1-4401 FAX: 408-577-6621
(optimized for output power).
(3)
m
p
(2)
ds
dss
dg
= 3 V.
ds
(1)
= 2.4 mA.
Units Min
Units Min
MHz
MHz
dBm
dBm
mA
dB
dB
dB
dB
DS
mS
V
= 8 V, I
The FP2189 is a high performance 1-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a drain
bias of +8 V and 250 mA to achieve +43 dBm output IP3
performance and an output power of +30 dBm at 1 -dB
compression, while providing 18.5 dB gain at 900 MHz.
The device conforms to WJ Communications’ long history
of producing high reliability and quality components. The
FP2189 has an associated MTTF of greater than 100 years
at a mounting temperature of 85 C and is available in both
the standard SOT-89 package and the environmentally-
friendly lead-free/green/RoHS-compliant and green SOT-
89 package. All devices are 100% RF & DC tested.
The product is targeted f o r use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Rating
-40 to +85 C
-55 to +125 C
4.0 W
6 dB above Input P1dB
+14 V
+220 C
DQ
445
= 250 mA in an application circuit
15
+8V @ 250 mA
Product Description
50 - 4000
Typ
Typ
18.5
+30
+43
615
280
-2.1
800
4.5
24
e- mail: sales@wj.com
Product Information
Max
Max
705
21
Typical Performance
5. Typical parameters represent performance in a tuned application circuit.
Ordering Information
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
IS-95 Channel Power
W-CDMA Ch. Power
Drain Voltage
Drain Current
Web site: www.wj.com
Part No.
FP2189
FP2189-G
FP2189-PCB900S
FP2189-PCB1900S
FP2189-PCB2140S
@ -45 dBc ACPR
@ -45 dBc ACLR
(4)
Specifications and information are subject to change without notice.
Units
Description
1 -Watt HFET
(leaded SOT-89 Pkg)
1 -Watt HFET
(lead-free/green/RoHS-compliant SOT-89 Pkg)
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
MHz
dBm
dBm
dBm
mA
dB
dB
dB
dB
V
Functional Diagram
+30.2 +30.4 +30.6 +31.2
+42.8 +43.5 +43.9 +45.3
+24.5 +23.8
Output / Drain
18.7
915
Input / Gate
8.3
4.5
21
RF IN
Function
Ground
1
(5)
1960
15.6
14.6
3.4
Typical
12
GND
GND
2
4
250
+8
+22.2
RF OUT
2140
14.4
11.5
Pin No.
4.5
23
2, 4
September 2004
3
1
3
2450
13.0
9.6
26

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FP2189-RFID Summary of contents

Page 1

... RoHS- of producing high reliability and quality components. The SOT-89 Package compliant FP2189 has an associated MTTF of greater than 100 years MTTF >100 Years at a mounting temperature and is available in both the standard SOT-89 package and the environmentally- friendly lead-free/green/RoHS-compliant and green SOT- Applications 89 package. All devices are 100% RF & ...

Page 2

... FP2189 1 - Watt HFET S-Parameters (V S21 and Maximum Stable Gain Frequency (GHz) Note: Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines. The S-parameters shown are the de-embedded data down to the device leads and represents typical performance of the device. ...

Page 3

... FP2189 1 - Watt HFET Application Circuit: 870 – 960 MHz (FP2189-PCB900S) Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+15 dBm / tone, 1 MHz spacing) Noise Figure IS-95 Channel Power @ -45 dBc ACPR CAP PORT IND ...

Page 4

... FP2189 1 - Watt HFET FP2189-PCB900S Application Circuit Performance Plots S11 vs. Frequency 0 -40c +25c +85c -5 -10 -15 -20 -25 -30 860 880 900 920 940 Frequency (MHz) P1dB vs. Frequency -40c +25c +85c 24 860 880 900 920 940 Frequency (MHz) OIP3 vs. Temperature ...

Page 5

... FP2189 1 - Watt HFET Application Circuit: 1930 – 1990 MHz (FP2189-PCB1900S) Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+15 dBm / tone, 1 MHz spacing) Noise Figure IS-95 Channel Power @ -45 dBc ACPR RES ID= R= CAP ...

Page 6

... FP2189 1 - Watt HFET FP2189-PCB1900S Application Circuit Performance Plots S11 vs. Frequency 0 -5 -10 -15 -20 -25 -40C +25C +85C -30 1930 1950 1970 Frequency (MHz) P1dB vs. Frequency -40c +25c +85c 24 1930 1950 1970 Frequency (MHz) OIP3 vs. Temperature freq = 1960, 1961 MHz ...

Page 7

... FP2189 1 - Watt HFET Application Circuit: 2110 – 2170 MHz (FP2189-PCB2140S) Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+15 dBm / tone, 1 MHz spacing) Noise Figure W-CDMA Channel Power @ -45 dBc ACPR -Vgg RES ...

Page 8

... FP2189 1 - Watt HFET FP2189-PCB2140S Application Circuit Performance Plots S11 vs. Frequency 0 -40c +25c +85c -5 -10 -15 -20 -25 -30 2110 2130 2150 Frequency (MHz) P1dB vs. Frequency -40C +25C +85C 24 2110 2130 2150 Frequency (MHz) OIP3 vs. Temperature freq = 2140, 2141 MHz ...

Page 9

... MHz spacing) The 2.4 – 2.6 GHz Reference Circuit is shown for design purposes only. An evaluation board is not readily available for this application. The reader can obtain an FP2189-PCB2140S evaluation board and modify it with the circuit shown to achieve the performance shown in this reference design. CAP ...

Page 10

... MHz spacing) The 3.4 – 3.6 GHz Reference Circuit is shown for design purposes only. An evaluation board is not readily available for this application. The reader can obtain an FP2189-PCB2140S evaluation board and modify it with the circuit shown to achieve the performance shown in this reference design. IND ...

Page 11

... The active-bias circuit, shown on the right, uses dual PNP transistors to provide a constant drain current into the FP2189, while also eliminating the effects of pinchoff variation. This configuration is best suited for applications where the intended output power level of the amplifier is backed off at least 6 dB away from its compression point ...

Page 12

... MTTF of 1 million hours is achieved for junction temperatures below 160 C. WJ Communications, Inc Phone 1-800- WJ1-4401 FAX: 408-577-6621 Product Information The FP2189 will be marked with an “FP2189” designator. An alphanumeric lot code (“XXXX-X”) is also marked below the part designator on the top surface of the package. ...

Page 13

... FP2189 1 - Watt HFET FP2189-G (Green / Lead-free SOT-89 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Land Pattern Thermal Specifications ...

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