IRF1104SPBF International Rectifier, IRF1104SPBF Datasheet

IRF1104SPBF

Manufacturer Part Number

IRF1104SPBF

Description

(IRF1104S/LPBF) HEXFET Power MOSFET

Manufacturer

International Rectifier

Datasheets

1.IRF1104SPBF.pdf (11 pages)

2.IRF1104SPBF.pdf (8 pages)

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Description

Absolute Maximum Ratings

Thermal Resistance

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-resistance

in any existing surface mount package. The D

suitable for high current applications because of its low

internal connection resistance and can dissipate up to 2.0W

in a typical surface mount application.

The through-hole version (IRF1104L) is available for low-

profile applications.

www.irf.com

dv/dt

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

Surface Mount (IRF1104S)

Low-profile through-hole (IRF1104L)

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient(PCB Mounted,steady-state)**

Parameter

Pak is

@ 10V

300 (1.6mm from case )

Typ.

–––

D P ak

HEXFET

-55 to + 175

IRF1104S/L

Max.

100

400

170

350

2.4

1.1

±20

5.0

T O -26 2

Power MOSFET

DS(on)

Max.

0.9

DSS

= 100A

= 0.009

= 40V

PD -91845

Units

°C/W

W/°C

V/ns

°C

11/20/98

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