BUP307 Infineon Technologies Corporation, BUP307 Datasheet

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BUP307

Manufacturer Part Number
BUP307
Description
Igbt
Manufacturer
Infineon Technologies Corporation
Datasheet

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IGBT
Preliminary data
Semiconductor Group
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Type
BUP 307
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Avalanche energy, single pulse
I
L = 200 µH, T
Power dissipation
T
Chip or operating temperature
Storage temperature
C
C
C
C
C
C
GE
= 15 A, V
= 25 °C
= 90 °C
= 25 °C
= 90 °C
= 25 °C
= 20 k
CC
j
= 25 °C
= 50 V, R
GE
p
= 1 ms
= 25
V
1200V 35A
CE
I
C
1
Package
TO-218 AB
Symbol
V
V
V
I
I
E
P
T
T
C
Cpuls
j
stg
CE
CGR
GE
AS
tot
Pin 1
G
-55 ... + 150
-55 ... + 150
Values
Ordering Code
Q67078-A4201-A2
± 20
1200
1200
310
35
23
70
46
23
Pin 2
C
Dec-07-1995
BUP 307
Pin 3
Unit
V
A
mJ
W
°C
E

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BUP307 Summary of contents

Page 1

IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type BUP 307 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter voltage DC ...

Page 2

Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Electrical Characteristics Parameter Static Characteristics Gate threshold voltage 0 ...

Page 3

Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 ...

Page 4

Power dissipation tot C parameter: T 150 °C j 320 W P tot 240 200 160 120 Safe operating area ...

Page 5

Typ. output characteristics ( ) parameter µ 125 ° Typ. saturation characteristics CE(sat) GE parameter °C j ...

Page 6

Typ. gate charge Gate parameter puls 400 100 120 140 ...

Page 7

Package Outlines Dimensions in mm Weight Semiconductor Group 7 BUP 307 Dec-07-1995 ...

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