IRF3415

Manufacturer Part NumberIRF3415
DescriptionPower MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
ManufacturerInternational Rectifier
IRF3415 datasheet
 


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Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Case-to-Sink, Flat, Greased Surface
CS
R
Junction-to-Ambient
JA
HEXFET
D
G
S
TO-220AB
Max.
@ 10V
GS
@ 10V
GS
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
PD - 91477D
IRF3415
®
Power MOSFET
V
= 150V
DSS
R
= 0.042
DS(on)
I
= 43A
D
Units
43
30
A
150
200
W
1.3
W/°C
± 20
V
590
mJ
22
A
20
mJ
5.0
V/ns
°C
Max.
Units
0.75
–––
°C/W
62
5/13/98

IRF3415 Summary of contents

  • Page 1

    ... CS R Junction-to-Ambient JA HEXFET TO-220AB Max. @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– 91477D IRF3415 ® Power MOSFET V = 150V DSS R = 0.042 DS(on 43A D Units 150 200 W 1.3 W/°C ± 20 ...

  • Page 2

    ... IRF3415 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

  • Page 3

    ... V DS Fig 2. Typical Output Characteristics 3.0 37A 2.5 2.0 1.5 ° 1.0 0.5 0.0 -60 -40 - Fig 4. Normalized On-Resistance IRF3415 4.5V 20us PULSE WIDTH 175 100 , Drain-to-Source Voltage ( 10V 100 120 140 160 180 Junction Temperature ( C) J Vs. Temperature ...

  • Page 4

    ... IRF3415 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss C rss 1000 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 175 ...

  • Page 5

    ... Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF3415 D.U. 10V µ d(off ...

  • Page 6

    ... IRF3415 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 1400 1200 1000 ...

  • Page 7

    ... Voltage Body Diode Inductor Curent Ripple for Logic Level Devices GS Fig 14. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + + controlled by Duty Factor "D" P. Period V =10V GS di/dt dv/ Forward Drop I SD IRF3415 DD * ...

  • Page 8

    ... IRF3415 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82. ...