IRF3415 International Rectifier, IRF3415 Datasheet
IRF3415
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IRF3415 Summary of contents
Page 1
... CS R Junction-to-Ambient JA HEXFET TO-220AB Max. @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– 91477D IRF3415 ® Power MOSFET V = 150V DSS R = 0.042 DS(on 43A D Units 150 200 W 1.3 W/°C ± 20 ...
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... IRF3415 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... V DS Fig 2. Typical Output Characteristics 3.0 37A 2.5 2.0 1.5 ° 1.0 0.5 0.0 -60 -40 - Fig 4. Normalized On-Resistance IRF3415 4.5V 20us PULSE WIDTH 175 100 , Drain-to-Source Voltage ( 10V 100 120 140 160 180 Junction Temperature ( C) J Vs. Temperature ...
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... IRF3415 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss C rss 1000 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 175 ...
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... Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF3415 D.U. 10V µ d(off ...
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... IRF3415 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 1400 1200 1000 ...
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... Voltage Body Diode Inductor Curent Ripple for Logic Level Devices GS Fig 14. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + + controlled by Duty Factor "D" P. Period V =10V GS di/dt dv/ Forward Drop I SD IRF3415 DD * ...
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... IRF3415 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82. ...