IRF630A Fairchild Semiconductor, IRF630A Datasheet
IRF630A
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IRF630A Summary of contents
Page 1
... Junction-to-Ambient JA ©1999 Fairchild Semiconductor Corporation = 200V DS Characteristic o = =100 ) = Characteristic Case-to-Sink IRF630A BV = 200 V DSS R = 0.4 DS(on TO-220 1.Gate 2. Drain 3. Source Value Units V 200 162 7.2 5 ...
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... IRF630A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...
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... Fig 6. Gate Charge vs. Gate-Source Voltage = IRF630A @ Notes : 250 s Pulse Test Gate-Source Voltage [ ...
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... IRF630A Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 0.8 -75 -50 - Junction Temperature [ J Fig 9. Max. Safe Operating Area Operation in This Area 2 is Limited DS(on Notes : 150 Single Pulse - Drain-Source Voltage [V] ...
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... GS Same Type as DUT 10V V DS DUT Current Sampling ( Resistor out 0.5 rated 10 DSS IRF630A Charge 90 d(on) r d(off off BV DSS 1 ---- 2 -------------------- DSS ...
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... IRF630A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + Same Type as DUT • dv/dt controlled by “R ” G • I controlled by Duty Factor “D” S Gate Pulse Width -------------------------- D = Gate Pulse Period ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...