IRF650 Fairchild Semiconductor, IRF650 Datasheet - Page 3

• Manufacturer Part Number: IRF650
• Description: 200V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
8000
6000
4000
2000
0.4
0.3
0.2
0.1
0.0
10
10
10
0
10
2
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
30
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
10
D
, Drain Current [A]
0
0
C
C
C
iss
rss
oss
60
V
GS
V
= 20V
GS
= 10V
C
C
C
※ Notes :
iss
oss
rss
1. 250μ s Pulse Test
2. T
10
10
= C
= C
= C
90
※ Note : T
1
1
C
gs
gd
ds
= 25℃
+ C
+ C
※ Notes :
gd
1. V
2. f = 1 MHz
gd
(C
J
GS
ds
= 25 ℃
= shorted)
= 0 V
120
10
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
2
1
0
2
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25
Figure 2. Transfer Characteristics
150
0.4
o
C
o
Variation with Source Current
C
20
150℃
0.6
4
V
V
and Temperature
Q
25℃
GS
SD
0.8
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
-55
V
40
o
DS
C
1.0
V
= 160V
DS
= 100V
6
V
DS
1.2
= 40V
60
1.4
※ Notes :
※ Notes :
1. V
2. 250 μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
1.6
= 40V
80
= 0V
D
= 32 A
1.8
Rev. A1, December 2002
100
10
2.0