IRF650 Fairchild Semiconductor, IRF650 Datasheet - Page 4

• Manufacturer Part Number: IRF650
• Description: 200V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
30
25
20
15
10
5
0
Figure 9-1. Maximum Safe Operating Area
25
10
1.2
1.1
1.0
0.9
0.8
10
10
10
-100
-1
2
1
0
Figure 7. Breakdown Voltage Variation
10
Figure 10. Maximum Drain Current
0
50
-50
vs Case Temperature
T
T
V
C
vs Temperature
J
, Case Temperature [ ℃ ]
, Junction Temperature [
DS
0
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
※ Notes :
for IRF650B
75
10
1. T
2. T
3. Single Pulse
1
C
J
= 150
= 25
o
C
o
DS(on)
C
50
DC
100
10 ms
100
1 ms
(Continued)
o
C]
※ Notes :
100 s
10
1. V
2. I
125
2
D
G S
= 250 μ A
= 0 V
150
10 s
150
200
Figure 9-2. Maximum Safe Operating Area
10
10
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-2
-100
3
2
1
0
10
0
Figure 8. On-Resistance Variation
-50
V
T
vs Temperature
J
Operation in This Area
is Limited by R
DS
, Junction Temperature [
for IRFS650B
0
, Drain-Source Voltage [V]
※ Notes :
10
1. T
2. T
3. Single Pulse
1
C
J
= 150
= 25
DC
DS(on)
o
C
o
C
50
100 ms
10 ms
100
1 ms
o
C]
100 s
10
2
※ Notes :
1. V
2. I
150
D
GS
= 16 A
= 10 V
Rev. A1, December 2002
200