IRF654 Fairchild Semiconductor, IRF654 Datasheet

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IRF654

Manufacturer Part Number
IRF654
Description
250V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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©2001 Fairchild Semiconductor Corporation
IRF654B/IRFS654B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters and
switch mode power supplies.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF Series
TO-220
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 21A, 250V, R
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
IRFS Series
TO-220F
IRF654B
IRF654B
DS(on)
13.3
1.25
62.5
156
0.8
0.5
21
84
-55 to +150
= 0.14
15.6
250
700
300
5.5
21
30
G
IRFS654B
IRFS654B
@V
13.3 *
21 *
84 *
62.5
0.4
2.5
50
GS
--
= 10 V
November 2001
D
S
Rev. A, November 2001
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A

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IRF654 Summary of contents

Page 1

... C Parameter November 2001 = 0. DS(on IRF654B IRFS654B Units 250 13.3 13 700 15.6 mJ 5.5 V/ns 156 50 W 1.25 0.4 W/°C -55 to +150 °C 300 °C IRF654B IRFS654B Units 0.8 2.5 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. A, November 2001 ...

Page 2

... ≤ 25A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C ...

Page 3

... Drain Current and Gate Voltage 8000 6000 C iss 4000 C oss C 2000 rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation ※ Notes : 1. 250μ s Pulse Test 25℃ 10V 20V ※ ...

Page 4

... 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for IRF654B Case Temperature [ ℃ Figure 10. Maximum Drain Current vs Case Temperature ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2 ...

Page 5

... Figure 11-2. Transient Thermal Response Curve for IRFS654B ©2001 Fairchild Semiconductor Corporation (Continued) ※ ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 8

... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2001 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, November 2001 ...

Page 9

... Package Dimensions (Continued) 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2001 Fairchild Semiconductor Corporation TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, November 2001 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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