IRF654A Fairchild Semiconductor, IRF654A Datasheet
IRF654A
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IRF654A Summary of contents
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... Peak Diode Recovery dv/dt Total Power Dissipation (T = Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient IRF654A BV = 250 V DSS R = 0.14 DS(on TO-220 ...
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... IRF654A Electrical Characteristics Symbol BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance www.DataSheet4U.com fs C Input Capacitance iss C Output Capacitance ...
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... oss rss Drain-Source Voltage [V] DS IRF654A Fig 2. Transfer Characteristics ...
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... IRF654A Fig 7. Breakdown Voltage vs. Temperature www.DataSheet4U.com Fig 9. Max. Safe Operating Area ...
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... Resistor Resistor Fig 13. Resistive Switching Test Circuit & Waveforms R L out 0.5 rated DUT Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms DUT IRF654A 10V Charge V out 90% 10 d(on) r d(off) ...
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... IRF654A www.DataSheet4U.com V ( Driver ) I ( DUT ) V ( DUT ) Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT Driver V GS Same Type DUT V dv/dt controlled by “ controlled by Duty Factor “D” S Gate Pulse Width -------------------------- Gate Pulse Period I , Body Diode Forward Current ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS EnSigna TM FACT™ FACT Quiet Series™ ...