IRF710A Fairchild Semiconductor, IRF710A Datasheet

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IRF710A

Manufacturer Part Number
IRF710A
Description
Advanced Power MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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©1999 Fairchild Semiconductor Corporation
Thermal Resistance
FEATURES
Absolute Maximum Ratings
Lower Leakage Current: 10 A (Max.) @ V
T
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Symbol
Symbol
Low R
J
R
dv/dt
R
R
V
V
E
E
I
I
, T
P
I
T
DM
DSS
AR
D
GS
AS
AR
CS
JC
JA
D
L
STG
DS(ON)
: 2.815
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
(Typ.)
Junction-to-Ambient
Junction-to-Case
Characteristic
Characteristic
Case-to-Sink
C
=25 C)
C
C
DS
=25 C)
=100 C)
= 400V
(1)
(2)
(1)
(1)
(3)
Typ.
0.5
--
--
- 55 to +150
Value
0.29
300
BV
R
I
400
114
1.3
3.6
4.0
1
36
2
D
TO-220
1.Gate 2. Drain 3. Source
3
2
6
30
2
DS(on)
DSS
= 2 A
IRF710A
Max.
3.44
62.5
--
= 3.6
= 400 V
Units
Units
W/ C
V/ns
C/W
mJ
mJ
W
V
A
A
V
A
C
Rev. B

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IRF710A Summary of contents

Page 1

... Thermal Resistance Symbol R Junction-to-Case Junction-to-Ambient JA ©1999 Fairchild Semiconductor Corporation = 400V DS = =100 C) C (1) (2) (1) (1) (3) = Characteristic Case-to-Sink IRF710A BV = 400 V DSS R = 3.6 DS(on TO-220 1.Gate 2. Drain 3. Source Value Units 400 1 ...

Page 2

... IRF710A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... Fig 6. Gate Charge vs. Gate-Source Voltage = IRF710A @ Gate-Source Voltage [ ...

Page 4

... IRF710A Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ J Fig 9. Max. Safe Operating Area DS(on ...

Page 5

... DUT 10V DUT R 2 Current Sampling ( Resistor out 90 0.5 rated 10 d(on DSS IRF710A Charge d(off off BV DSS 1 ---- 2 -------------------- = DSS Time t ...

Page 6

... IRF710A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + Same Type as DUT dv/dt controlled controlled by Duty Factor D S Gate Pulse Width -------------------------- D = Gate Pulse Period , Body Diode Forward Current ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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