IRF720A Fairchild Semiconductor, IRF720A Datasheet
IRF720A
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IRF720A Summary of contents
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... Thermal Resistance Symbol R Junction-to-Case Junction-to-Ambient JA ©1999 Fairchild Semiconductor Corporation = 400V DS = =100 C) C (1) (2) (1) (1) (3) = Characteristic Case-to-Sink IRF720A BV = 400 V DSS R = 1.8 DS(on 3 TO-220 1.Gate 2. Drain 3. Source Value Units V 400 3 249 3 ...
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... IRF720A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...
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... Fig 6. Gate Charge vs. Gate-Source Voltage = IRF720A ...
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... IRF720A Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ J Fig 9. Max. Safe Operating Area ...
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... DUT 10V DUT R 2 Current Sampling ( Resistor out 90 0.5 rated 10 d(on DSS IRF720A Charge d(off off BV DSS 1 ---- 2 -------------------- = DSS Time t ...
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... IRF720A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + Same Type as DUT dv/dt controlled controlled by Duty Factor D S Gate Pulse Width -------------------------- D = Gate Pulse Period , Body Diode Forward Current ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...