IRF7501

Manufacturer Part NumberIRF7501
DescriptionPower MOSFET(Vdss=20V/ Rds(on)=0.135ohm)
ManufacturerInternational Rectifier
IRF7501 datasheet
 
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Generation V Technology
Ulrtra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Drain-Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Maximum Power Dissipation
D
A
P
@T
= 70°C
Maximum Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage Single Pulse tp<10µs
GSM
V
Gate-to-Source Voltage
GS
dv/dt
Peak Diode Recovery dv/dt
TJ , TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
JA
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
www.irf.com
PRELIMINARY
HEXFET
1
8
S 1
2
7
G 1
3
6
S 2
4
5
G 2
T o p V ie w
@ 10V
GS
@ 10V
GS
-55 to + 150
240 (1.6mm from case)
PD - 91265H
IRF7501
®
Power MOSFET
D 1
V
=20V
DSS
D 1
D 2
D 2
R
= 0.135
DS(on)
M icro 8
Max.
Units
20
V
2.4
1.9
A
19
1.25
W
0.8
W
0.01
W/°C
16
V
± 12
V
5.0
V/ns
°C
Max.
Units
100
°C/W
1
4/30/98

IRF7501 Summary of contents

  • Page 1

    ... Date Code 505 or later . www.irf.com PRELIMINARY HEXFET 10V GS @ 10V GS - 150 240 (1.6mm from case 91265H IRF7501 ® Power MOSFET =20V DSS 0.135 DS(on) M icro 8 Max. Units 20 V 2.4 1 1.25 W ...

  • Page 2

    ... IRF7501 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

  • Page 3

    ... TOP 10 BOTTOM 1.5V 1 0.1 A 0.01 10 0.1 Fig 2. Typical Output Characteristics 150° 3.5 4 Fig 7. Typical Source-Drain Diode IRF7501 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 20µ 150° rain-to-S ource V oltage ( 25° ...

  • Page 4

    ... IRF7501 2 1.7A D 1.5 1.0 0.5 0.0 -60 -40 - Junction T em perature (° Fig 5. Normalized On-Resistance Vs. Temperature 0.13 0.11 0.09 0.07 0.05 4 0.8 0.6 0.4 0 4 100 120 140 160 Fig 6. Typical On-Resistance Vs. Drain ate -to-S o urc e V olta Fig 7. Typical On-Resistance Vs. Gate ...

  • Page 5

    ... 100 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7501 = 16V FIG Total G ate C harge ( Fig 9. Typical Gate Charge Vs. Gate-to-Source Voltage Notes: 1 ...

  • Page 6

    ... Part Marking Information IRF7501 example ...

  • Page 7

    ... ( ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF7501 . . ...