IRF7501 International Rectifier, IRF7501 Datasheet - Page 2

• Manufacturer Part Number: IRF7501
• Description: Power MOSFET(Vdss=20V/ Rds(on)=0.135ohm)
• Manufacturer: International Rectifier

Electrical Characteristics @ T
IRF7501
Source-Drain Ratings and Characteristics
Notes:
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
d(on)
d(off)
f
I
r
S
SM
DSS
rr
V
fs
GSS
(BR)DSS
GS(th)
gd
iss
oss
rss
SD
g
gs
DS(on)
rr
Repetitive rating; pulse width limited by
2
(BR)DSS
I
T
max. junction temperature. ( See fig. 10 )
SD
J
150°C
1.7A, di/dt
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
66A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
0.70 –––
Min. Typ. Max. Units
–––
–––
––– 0.085 0.135
––– 0.120 0.20
–––
–––
–––
–––
–––
––– 0.84
–––
–––
–––
–––
–––
–––
–––
––– 0.041 –––
–––
–––
–––
–––
2.6
20
Pulse width
Surface mounted on FR-4 board, t 10sec
–––
–––
–––
–––
–––
––– -100
260
130
–––
–––
–––
5.3
2.2
5.7
24
15
16
61
37
39
–––
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
8.0
1.0
1.3
3.3
19
1.2
25
1.25
59
56
300µs; duty cycle
V/°C
µA
nA
nC
ns
pF
nC
ns
V
V
S
A
V
ƒ = 1.0MHz, See Fig. 8
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
T
di/dt = 100A/µs
showing the
p-n junction diode.
T
MOSFET symbol
integral reverse
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
J
J
= 1.7A
= 1.7A
= 25°C, I
= 25°C, I
= 6.0
= 5.7
= 0V, I
= V
= 10V, I
= 16V, V
= 16V, V
= 12V
= -12V
= 16V
= 0V
= 15V
= 4.5V, I
= 2.7V, I
= 4.5V, See Fig. 9
= 10V
GS
Conditions
, I
D
S
F
D
D
2%
= 250µA
D
D
GS
GS
Conditions
= 1.7A, V
= 1.7A
= 250µA
= 0.85A
= 1.7A
= 0.85A
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 125°C
= 0V
G
D
S