IRF7504 International Rectifier, IRF7504 Datasheet

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IRF7504

Manufacturer Part Number
IRF7504
Description
Power MOSFET(Vdss=-20V/ Rds(on)=0.27ohm)
Manufacturer
International Rectifier
Datasheet

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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
dv/dt
T
R
D
D
DM
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
J,
D
GS
@ T
@ T
JA
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
T
@T
STG
A
A
A
= 25°C
= 70°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
@ -4.5V
@ -4.5V
G 2
G 1
S 2
S 1
1
2
3
4
T o p V iew
Typ.
–––
-55 to + 150
8
7
6
5
HEXFET
Max.
-1.7
-1.4
-9.6
-5.0
1.25
± 12
10
Micro8
D 1
D 1
D 2
D 2
®
Max.
R
IRF7504
100
Power MOSFET
V
DS(on)
DSS
PD - 9.1267G
= -20V
= 0.27
Units
mW/°C
Units
V/ns
W
°C
°C/W
A
V
8/25/97

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IRF7504 Summary of contents

Page 1

... All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . iew @ -4. -4.5V GS Typ. ––– 9.1267G IRF7504 ® HEXFET Power MOSFET -20V DSS 0. DS(on) Micro8 Max ...

Page 2

... IRF7504 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... te-to-S o urce V oltage ( Fig 3. Typical Transfer Characteristics IRF7504 VGS TOP - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2. BOTT 1.5V 20 µ IDTH T = 150 ° ...

Page 4

... IRF7504 iss rain-to-S ource V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0°C ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 10a. Switching Time Test Circuit 10 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak T 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7504 D.U. -4.5V Pulse Width µs Duty Factor d(on) r ...

Page 6

... IRF7504 Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Reverse Recovery Current Re-Applied Voltage Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations D.U dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test Driver Gate Drive Period P.W. D.U.T. I Waveform ...

Page 7

... 1. . IRF7504 M ILL .044 0.91 1.11 .008 0.10 0.20 .014 0.25 0. ...

Page 8

... IRF7504 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches & ...

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