IRF7509 International Rectifier, IRF7509 Datasheet

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IRF7509

Manufacturer Part Number
IRF7509
Description
Power MOSFET(Vdss=+-30V)
Manufacturer
International Rectifier
Datasheet
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Description
Fifth
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
V
I
I
I
P
P
V
V
dv/dt
T
R
D
D
DM
J
DS
D
D
GS
GSM
@ T
@ T
JA
, T
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
@T
@T
STG
Generation HEXFETs from International Rectifier utilize advanced
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Maximum Junction-to-Ambient
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Parameter
Parameter
GS
GS
G 2
G 1
S 2
S 1
N-C HANNE L M O S F E T
P -C HANNE L M O S F E T
1
2
3
4
T op V ie w
N-Channel
2.7
2.1
30
21
8
6
5
7
HEXFET
240 (1.6mm from case)
D 1
D 1
D 2
D 2
-55 to + 150
Max.
100
Max.
1.25
± 20
10
0.8
5.0
30
R
®
V
DS(on)
DSS
IRF7509
P-Channel
Power MOSFET
-30
-2.0
-1.6
-16
M icro 8
PD - 91270J
0.11
N-Ch
30V
mW/°C
0.20
Units
Units
°C/W
P-Ch
-30V
V/ns
V
V
°C
W
W
V
A
1
12/1/98

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IRF7509 Summary of contents

Page 1

... HANNE N-Channel 30 2 150 240 (1.6mm from case 91270J IRF7509 ® Power MOSFET N-Ch P-Ch V 30V -30V DSS R 0.11 0.20 DS(on) M icro 8 Max. Units P-Channel -30 V -2.0 -1.6 A -16 1. ...

Page 2

... IRF7509 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... unc tion rature (° Fig 5. Normalized On-Resistance Vs. Temperature www.irf.com N - Channel 3. 5.5 6 10V Fig 6. Typical On-Resistance Vs. Drain IRF7509 VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3. 3.0V 1 20µ 150°C J ...

Page 4

... IRF7509 0.140 0.120 ID = 2.7A 0.100 0.080 0.060 Gate-to-Source Voltage (V) GS Fig 7. Typical On-Resistance Vs. Gate Voltage 400 iss rss oss ds gd 300 C iss C oss 200 C rss 100 rain-to-S ourc e V oltage ( Fig 9 ...

Page 5

... unc tion T em perature (° Fig 15. Normalized On-Resistance Vs. Temperature www.irf.com P - Channel 6.0 7 -10V Fig 16. Typical On-Resistance Vs. Drain IRF7509 1 0 VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 1 20µ 150°C J 0.1 ...

Page 6

... IRF7509 /5 Fig 17. Typical On-Resistance Vs. Gate Voltage 400 300 200 100 rain-to-S ourc e V oltage ( Fig 19. Typical Capacitance Vs. Drain-to-Source Voltage ...

Page 7

... 0.25 (.010 0.10 (.004 IRF7509 ...

Page 8

... IRF7509 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches & - SIO ...

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