IRF750A

Manufacturer Part NumberIRF750A
DescriptionAdvanced Power MOSFET
ManufacturerFairchild Semiconductor
IRF750A datasheet
 


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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ V
Low R
DS(ON)
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
, T
J
STG
T
L
Thermal Resistance
Symbol
R
JC
R
CS
R
JA
= 400V
DS
: 0.254
(Typ.)
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
=25 C)
C
Continuous Drain Current (T
=100 C)
C
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
=25 C)
C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
IRF750A
BV
= 400 V
DSS
R
= 0.3
DS(on)
I
= 15 A
D
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
Units
400
V
15
A
9.5
(1)
60
A
30
V
(2)
1157
mJ
(1)
15
A
(1)
mJ
15.6
(3)
4.0
V/ns
156
W
1.25
W/ C
- 55 to +150
C
300
Typ.
Max.
Units
--
0.8
0.5
--
C/W
--
62.5
1

IRF750A Summary of contents

  • Page 1

    ... Peak Diode Recovery dv/dt Total Power Dissipation (T = Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient IRF750A BV = 400 V DSS R = 0.3 DS(on TO-220 ...

  • Page 2

    ... IRF750A Electrical Characteristics (T Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

  • Page 3

    ... Total Gate Charge [nC] G IRF750A @ ...

  • Page 4

    ... IRF750A Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ C] J Fig 9. Max. Safe Operating Area ...

  • Page 5

    ... V GS 10V Resistor L V out 90 0.5 rated 10 d(on ---- DSS IRF750A Charge t d(off off BV DSS 2 -------------------- DSS (t) DS Time ...

  • Page 6

    ... IRF750A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Driver ) I , Body Diode Forward Current DUT ) DUT ) + Same Type as DUT dv/dt controlled by “R ” controlled by Duty Factor “D” S Gate Pulse Width ...

  • Page 7

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...