IRF750A Fairchild Semiconductor, IRF750A Datasheet

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IRF750A

Manufacturer Part Number
IRF750A
Description
Advanced Power MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
www.DataSheet4U.com
Advanced Power MOSFET
Thermal Resistance
FEATURES
Absolute Maximum Ratings
T
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 A (Max.) @ V
Low R
Symbol
Symbol
J
R
dv/dt
R
R
V
V
E
E
I
I
, T
P
I
T
DM
AR
DSS
D
GS
AS
AR
CS
JC
JA
D
L
STG
DS(ON)
: 0.254
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
(Typ.)
Junction-to-Ambient
Junction-to-Case
Characteristic
Characteristic
Case-to-Sink
C
=25 C)
C
C
=25 C)
=100 C)
DS
= 400V
(1)
(2)
(1)
(1)
(3)
Typ.
0.5
--
--
- 55 to +150
Value
1157
15.6
1.25
300
400
156
BV
R
I
1
9.5
4.0
15
60
15
2
TO-220
D
3
1.Gate 2. Drain 3. Source
30
DS(on)
DSS
= 15 A
IRF750A
62.5
Max.
0.8
--
= 0.3
= 400 V
Units
Units
W/ C
V/ns
C/W
mJ
mJ
W
V
A
A
V
A
C
1

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IRF750A Summary of contents

Page 1

... Peak Diode Recovery dv/dt Total Power Dissipation (T = Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient IRF750A BV = 400 V DSS R = 0.3 DS(on TO-220 ...

Page 2

... IRF750A Electrical Characteristics (T Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... Total Gate Charge [nC] G IRF750A @ ...

Page 4

... IRF750A Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ C] J Fig 9. Max. Safe Operating Area ...

Page 5

... V GS 10V Resistor L V out 90 0.5 rated 10 d(on ---- DSS IRF750A Charge t d(off off BV DSS 2 -------------------- DSS (t) DS Time ...

Page 6

... IRF750A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Driver ) I , Body Diode Forward Current DUT ) DUT ) + Same Type as DUT dv/dt controlled by “R ” controlled by Duty Factor “D” S Gate Pulse Width ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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