IRF7555 International Rectifier, IRF7555 Datasheet
IRF7555
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IRF7555 Summary of contents
Page 1
... Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET -4. -4.5V GS „ „ ‚ Max. „ PD -91865B IRF7555 ® Power MOSFET -20V DSS 0.055 DS(on) Micro8 Max. Units -20 V -4.3 -3.4 A -34 1 ...
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... IRF7555 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... TOP BOTTOM 10 1 ° 0.1 0.1 10 100 Fig 2. Typical Output Characteristics 2 1.5 ° 150 C J 1.0 0.5 = -15V 0.0 -60 -40 -20 4.0 5.0 Fig 4. Normalized On-Resistance IRF7555 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V -1.50V -1.50V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS -4. ...
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... IRF7555 1600 1MHz iss rss oss ds gd 1200 C iss 800 400 C oss C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 C J ° 0.1 0.0 0.4 0.8 1.2 -V ,Source-to-Drain Voltage (V) SD Fig 7 ...
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... Starting T , Junction Temperature ( C) Fig 10. Maximum Avalanche Energy Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7555 I D TOP -1.3A -2.4A BOTTOM -3. 100 125 150 ° J Vs. Drain Current ...
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... IRF7555 Package Outline Micro8 Outline Dimensions are shown in millimeters (inches (. (. .5M -1 982 . ...
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... CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF7555 ...