IRF7603 International Rectifier, IRF7603 Datasheet

IRF7603

Manufacturer Part Number

IRF7603

Description

Power MOSFET(Vdss=30V/ Rds(on)=0.035ohm)

Manufacturer

International Rectifier

Datasheet

1.IRF7603.pdf (8 pages)

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7603TR

Manufacturer:

Quantity:

3 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7603TR

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Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7603TRPBF

Manufacturer:

Quantity:

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Description

Absolute Maximum Ratings

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The new Micro8 package, with half the footprint area of the

standard SO-8, provides the smallest footprint available in

an SOIC outline. This makes the Micro8 an ideal device for

applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro8 will allow

it to fit easily into extremely thin application environments

such as portable electronics and PCMCIA cards.

Thermal Resistance

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

only for product marked with Date Code 505 or later .

dv/dt

@ T

Generation V Technology

Ultra Low On-Resistance

N-Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

Available in Tape & Reel

Fast Switching

STG

= 25°C

= 70°C

= 25°C

Maximum Junction-to-Ambient

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Parameter

@ 10V

T o p V ie w

Typ.

–––

-55 to + 150

HEXFET

Max.

± 20

5.6

4.5

1.8

5.0

Micro8

Max.

IRF7603

DS(on)

Power MOSFET

DSS

PD - 9.1262D

= 0.035

= 30V

mW/°C

°C/W

Units

V/ns

°C

8/25/97

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