IRF7754GPBF International Rectifier, IRF7754GPBF Datasheet

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IRF7754GPBF

Manufacturer Part Number
IRF7754GPBF
Description
Power MOSFET
Manufacturer
International Rectifier
Datasheet
www.DataSheet.in
Thermal Resistance
l
l
l
l
l
l
l
Absolute Maximum Ratings
Description
www.irf.com
HEXFET
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the ruggedized device design, that International Rectifier
is well known for,
efficient and reliable device for
management.
The TSSOP-8 package has 45% less footprint area than the
standard SO-8. This makes the TSSOP-8 an ideal device for
applications where printed circuit board space is at a premium.
The low profile (<1.2mm) allows it to fit easily into extremely
thin environments such as portable electronics and PCMCIA
cards.
V
I
I
I
P
P
V
T
R
D
D
DM
J
DS
D
D
GS
θJA
@ T
@ T
, T
P-Channel MOSFET
Ultra Low On-Resistance
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Lead-Free
Halogen-Free
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
®
Power MOSFETs from International Rectifier
provides thedesigner with an extremely
Linear Derating Factor
Gate-to-Source Voltage
Maximum Junction-to-Ambient
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Parameter
Parameter
battery and load

GS
GS
ƒ
ƒ
ƒ
@ -4.5V
@ -4.5V
!
"
!Ã2ÃT
"Ã2ÃT
Ã2Ã9
Ã2ÃB
V
-12V
DSS
IRF7754GPbF
HEXFET
'Ã2Ã9!
&Ã2ÃT!
%Ã2ÃT!
$Ã2ÃB!
25mΩ@V
34mΩ@V
49mΩ@V
R
-55 to +150
'
&
%
$
Max.
DS(on)
125
0.01
Max.
0.64
-5.5
-4.4
-12
-22
±8
1
®
GS
GS
GS
Power MOSFET
max
= -4.5V
= -2.5V
= -1.8V
TSSOP-8
PD- 96152A
-
-
-
5.4A
4.6A
3.9A
W/°C
Units
Units
I
05/14/09
°C/W
D
°C
W
W
V
A
V
1

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IRF7754GPBF Summary of contents

Page 1

... Pulsed Drain Current ƒ Maximum Power Dissipation ƒ Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Parameter ƒ Maximum Junction-to-Ambient PD- 96152A IRF7754GPbF ® HEXFET Power MOSFET V R max DSS DS(on) -12V 25mΩ@V = -4.5V GS 34mΩ ...

Page 2

... IRF7754GPbF Electrical Characteristics @ T V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage ...

Page 3

... BOTTOM -1.0V -1.0V 20µs PULSE WIDTH Tj = 25° 100 ° ° -10V DS 20µs PULSE WIDTH 1.4 1.6 1.8 2.0 , Gate-to-Source Voltage (V) IRF7754GPbF 100 TOP 10 BOTTOM -1.0V 1 -1.0V 20µs PULSE WIDTH Tj = 150°C 0.1 0 Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 2.0 -5. 1.5 1.0 0 ...

Page 4

... IRF7754GPbF 3200 2800 2400 Ciss 2000 1600 1200 Coss 800 Crss 400 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 150 0.1 0.2 0 Fig 7. Typical Source-Drain Diode Forward Voltage 4 www.DataSheet. 0V MHZ C iss = SHORTED ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com www.DataSheet.in 75 100 125 150 ° SINGLE PULSE (THERMAL RESPONSE) 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7754GPbF D.U. ≤ 1 ≤ 0.1 % Fig 10a. Switching Time Test Circuit d(on) r d(off ...

Page 6

... IRF7754GPbF 0.070 0.060 0.050 0.040 0.030 0.020 0.010 0.0 1.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs Fig 14a. Basic Gate Charge Waveform 6 www.DataSheet. -5.5A 2.0 3.0 4.0 5.0 6.0 7.0 Gate Voltage Charge 0.1 0. -1.8V 0.06 0. -2.5V 0. -4.5V 0 0.0 5.0 10.0 15.0 20.0 -ID , Drain Current ( A ) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D ...

Page 7

... Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com www.DataSheet. -250µA - 100 125 150 Temperature ( °C ) IRF7754GPbF 300 200 100 0 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 Time (sec) Typical Power Vs. Time 7 ...

Page 8

... IRF7754GPbF TSSOP8 Package Outline Dimensions are shown in milimeters (inches @! DI9@Y 6SF r "Y r! 'YÃi 8 iii hhh 8 'ÃTVSA 9D@ " Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.DataSheet. 7PUCÃTD9 ppp 'YÃ G@69Ã ...

Page 9

... Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.05/2009 IRF7754GPbF 6TT@H7G`ÃTDU@Ã8P9@ Ã "Å %€€ ...

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