IRF7754GPBF International Rectifier, IRF7754GPBF Datasheet - Page 4

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IRF7754GPBF

Manufacturer Part Number
IRF7754GPBF
Description
Power MOSFET
Manufacturer
International Rectifier
Datasheet
www.DataSheet.in
IRF7754GPbF
4
3200
2800
2400
2000
1600
1200
100
0.1
800
400
10
1
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
Coss
Ciss
Crss
T = 150 C
-V
J
-V DS , Drain-to-Source Voltage (V)
SD
Forward Voltage
0.4
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
°
0.6
10
f = 1 MHZ
0.8
T = 25 C
V
J
GS
= 0 V
°
1.0
100
100
Fig 8. Maximum Safe Operating Area
10
6
5
4
3
2
1
0
1
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C °
= 150 C
-5.4A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
-V
5
DS
Q , Total Gate Charge (nC)
G
°
, Drain-to-Source Voltage (V)
10
1
BY R
15
DS(on)
V
V
DS
DS
www.irf.com
=-9.6V
=-6V
20
10
1ms
10ms
25
100
30

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