IRF7757 International Rectifier, IRF7757 Datasheet

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IRF7757

Manufacturer Part Number
IRF7757
Description
Power MOSFET(Vdss=20V)
Manufacturer
International Rectifier
Datasheet
l
l
l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Description
R
www.irf.com
V
I
I
I
P
P
V
T
D
D
DM
DS
D
D
GS
J,
@ T
@ T
JA
Dual N-Channel MOSFET
Ultra Low On-Resistance
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Common Drain Configuration
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
®
Power MOSFETs from International Rectifier
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Parameter
Parameter
ƒ
provides the de-
ƒ
GS
GS
ƒ
@ 4.5V
@ 4.5V
1
2
3
4
4 = G2
1 = S1
2 = G1
3 = S2
V
20V
DSS
R
HEXFET
8 = D
7 = D
6 = D
5 = D
DS(on)
-55 to + 150
35@V
40@V
Max.
7
8
6
5
Max.
105
0.76
± 12
4.8
3.9
1.2
9.5
20
19
GS
GS
max (m
®
IRF7757
= 4.5V
= 2.5V
Power MOSFET
TSSOP-8
PD - 94174
4.8A
3.8A
mW/°C
I
Units
Units
°C/W
D
W
°C
V
A
V
05/03/01
1

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IRF7757 Summary of contents

Page 1

... Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com V DSS 20V 1 2 provides the de 4. 4.5V GS ƒ ƒ ƒ 94174 IRF7757 ® HEXFET Power MOSFET R max (m I DS(on) D 35@V = 4.5V 4.8A GS 40@V = 2.5V 3. TSSOP Max. Units ...

Page 2

... IRF7757 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 TOP BOTTOM 1. 100 0.1 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 0.0 -60 -40 -20 2.5 3.0 Fig 4. Normalized On-Resistance IRF7757 VGS 7.5V 5.0V 4.5V 3.5V 3.0V 2.5V 2.0V 1.5V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( 100 120 140 160 ° ...

Page 4

... IRF7757 10000 0V, C iss = rss = oss = Ciss 1000 Coss Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100.00 10. 150°C 1. 25°C 0.10 0.1 0.5 0 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode ...

Page 5

... Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms  0.01 0 Rectangular Pulse Duration (sec) 1 IRF7757 D.U. µ d(off ...

Page 6

... IRF7757 0.05 0. 4.8A 0.03 0.02 2.0 3.0 4.0 5.0 V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.050 0.040 0.030 0.020 0 6.0 7.0 8.0 Fig 13. Typical On-Resistance Vs. Drain 12V V GS Fig 14b. Gate Charge Test Circuit 2. 4.5V ...

Page 7

... 250µA 0.7 0.5 0.3 -75 -50 - Temperature ( °C ) Fig 15. Typical Threshold Voltage Vs. Junction Temperature www.irf.com 120 110 100 100 125 150 1.00 Fig 16. Typical Power Vs. Time IRF7757 10.00 100.00 1000.00 Time (sec) 7 ...

Page 8

... IRF7757 TSSOP-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7702 LOT CODE (XX) XXYW PART NUMBER 7702 DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF TSSOP-8 Tape and Reel DAT E CODE (YW) T ABLE 1 WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ET C.) WORK YEAR Y WEEK W 2001 2002 ...

Page 9

... This product has been designed and qualified for the consumer market. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. Qualification Standards can be found on IR’s Web site. TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/01 IRF7757 9 ...

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