IRF7757GPBF International Rectifier, IRF7757GPBF Datasheet

no-image

IRF7757GPBF

Manufacturer Part Number
IRF7757GPBF
Description
Power MOSFET
Manufacturer
International Rectifier
Datasheet
www.DataSheet.in
Thermal Resistance
l
l
l
l
l
l
l
l
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Description
V
I
I
I
P
P
V
T
R
www.irf.com
D
D
DM
J,
DS
D
D
GS
θJA
@ T
@ T
Dual N-Channel MOSFET
Ultra Low On-Resistance
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Common Drain Configuration
Lead-Free
Halogen-Free
@T
@T
T
STG
A
A
A
A
= 70°C
®
= 25°C
= 25°C
= 70°C
Power MOSFETs from International Rectifier
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Parameter
Parameter
ƒ
provides the de-
ƒ
GS
GS
ƒ
@ 4.5V
@ 4.5V
!
"
!Ã2ÃB
"Ã2ÃT!
V
20V
Ã2ÃB!
Ã2ÃT
DSS
IRF7757GPbF
R
HEXFET
'Ã2Ã9
&Ã2Ã9
%Ã2Ã9
$Ã2Ã9
DS(on)
-55 to + 150
35@V
40@V
Max.
'
&
%
$
Max.
105
0.76
± 12
4.8
3.9
1.2
9.5
20
19
GS
GS
max (mW)
®
= 4.5V
= 2.5V
Power MOSFET
TSSOP-8
PD- 96154A
4.8A
3.8A
mW/°C
I
Units
Units
°C/W
D
05/14/09
°C
V
A
V
1

Related parts for IRF7757GPBF

IRF7757GPBF Summary of contents

Page 1

... GS Continuous Drain Current 4.5V GS Pulsed Drain Current  ƒ Power Dissipation ƒ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Parameter ƒ Maximum Junction-to-Ambient PD- 96154A IRF7757GPbF ® HEXFET Power MOSFET V R max (mW) DSS DS(on) 20V 35@V = 4.5V 4.8A GS 40@V = 2.5V 3. & ...

Page 2

... IRF7757GPbF Electrical Characteristics @ T V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... Fig 3. Typical Transfer Characteristics www.irf.com www.DataSheet.in 100 10 1.5V 20µs PULSE WIDTH Tj = 25° 100 150° 15V 20µs PULSE WIDTH 2.0 2.5 3.0 IRF7757GPbF VGS TOP 7.5V 5.0V 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V 1.5V 20µs PULSE WIDTH Tj = 150°C 0 Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 2 ...

Page 4

... IRF7757GPbF 10000 1000 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100.00 10. 150°C 1.00 0.10 0.1 0 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode 4 www.DataSheet. 0V MHZ C iss = SHORTED C rss = oss = Ciss Coss ...

Page 5

... Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com www.DataSheet.in 75 100 125 150 ° SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7757GPbF ≤ 1 ≤ 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% 10 d(on) r d(off) f Fig 10b. Switching Time Waveforms ...

Page 6

... IRF7757GPbF 0.05 0.04 0.03 0.02 2.0 3.0 V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Fig 14a. Basic Gate Charge Waveform 6 www.DataSheet. 4.8A 4.0 5.0 6.0 7.0 8.0 Voltage Charge 0.050 2.5V 0.040 4.5V 0.030 0.020 Drain Current (A) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ ...

Page 7

... Fig 15. Typical Threshold Voltage Vs. Junction Temperature www.irf.com www.DataSheet.in 120 110 100 250µ 100 125 150 Temperature ( °C ) IRF7757GPbF 1.00 10.00 100.00 Time (sec) Fig 16. Typical Power Vs. Time 1000.00 7 ...

Page 8

... IRF7757GPbF TSSOP8 Package Outline Dimensions are shown in milimeters (inches @! DI9@Y 6SF r "Y r! 'YÃi 8 iii hhh 8 'ÃTVSA 9D@ T " Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.DataSheet. 7PUCÃTD9 ppp 'YÃ G@69Ã ...

Page 9

... Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.05/2009 IRF7757GPbF 6TT@H7G`ÃTDU@Ã8P9@ Ã "Å %€€ ...

Related keywords