IRFB20N50K International Rectifier, IRFB20N50K Datasheet
IRFB20N50K
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IRFB20N50K Summary of contents
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... Repetitive Avalanche Energy AR Thermal Resistance Symbol Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com IRFB20N50K SMPS MOSFET HEXFET V DSS 500V @ 10V GS @ 10V GS - 150 Typ. ––– ––– ––– Typ. ...
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Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current ...
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VGS TOP 15V 12V 10V 8.0V 7.0V 10 6.0V 5.5V BOTTOM 5.0V 1 0.1 5.0V 20µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ...
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0V, C iss = SHORTED C rss = C gd 10000 C oss = Ciss 1000 Coss 100 Crss ...
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C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig 11. Maximum ...
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D.U 20V GS 0. Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig ...
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D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * www.irf.com + ƒ - „ P.W. Period D = Period Body Diode Forward ...
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TO-220 Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 1 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ...