IRFB20N50K International Rectifier, IRFB20N50K Datasheet - Page 4

• Manufacturer Part Number: IRFB20N50K
• Description: SMPS MOSFET
• Manufacturer: International Rectifier

4
100000
10000
100.0
1000
10.0
100
1.0
0.1
10
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
0.4
Forward Voltage
T J = 150°C
V GS = 0V,
C iss
SHORTED
C rss
C oss
10
0.6
= C ds + C gd
Ciss
Coss
= C gd
Crss
= C gs + C gd , C ds
T J = 25°C
0.8
f = 1 MHZ
100
V GS = 0V
1.0
1.2
1000
1000
100
0.1
Fig 8. Maximum Safe Operating Area
20
16
12
10
8
4
0
1
0
I
Fig 6. Typical Gate Charge Vs.
1
D
Tc = 25°C
Tj = 150°C
Single Pulse
=
21A
Gate-to-Source Voltage
20
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
G
10
40
OPERATION IN THIS AREA
LIMITED BY R DS (on)
60
100
V
V
V
DS
DS
DS
= 400V
= 250V
= 100V
www.irf.com
80
FOR TEST CIRCUIT
SEE FIGURE
1000
100µsec
1msec
10msec
100
13
10000
120