IRFB260 International Rectifier, IRFB260 Datasheet - Page 4

• Manufacturer Part Number: IRFB260
• Description: Power MOSFET(Vdss=200V/ Rds(on)max=0.040ohm/ Id=56A)
• Manufacturer: International Rectifier

IRFB260N
100000
1000.00
10000
4
100.00
1000
10.00
100
10
1.00
0.10
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
Forward Voltage
0.5
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
T J = 25°C
1.0
Crss
Ciss
Coss
f = 1 MHZ
100
1.5
V GS = 0V
SHORTED
1000
2.0
1000
100
Fig 8. Maximum Safe Operating Area
10
12
10
1
7
5
2
0
0
Fig 6. Typical Gate Charge Vs.

1
I
D
Tc = 25°C
Tj = 175°C
Single Pulse
=
Gate-to-Source Voltage
34A
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
30
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
60

V
V
V
DS
DS
DS
= 160V
= 100V
= 40V
90
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100
120
100µsec
10msec
1msec
1000
150