IRFB59N10 International Rectifier, IRFB59N10 Datasheet

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IRFB59N10

Manufacturer Part Number
IRFB59N10
Description
Power MOSFET(Vdss=100V/ Rds(on)max=0.025ohm/ Id=59A)
Manufacturer
International Rectifier
Datasheet

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l
Typical SMPS Topologies
l
www.irf.com
l
l
l
Absolute Maximum Ratings
l
Applications
Benefits
I
I
I
P
P
V
dv/dt
T
T
D
D
DM
Notes  through ‡ are on page 11
J
STG
D
D
GS
@ T
@ T
Effective C
App. Note AN1001)
and Current
@T
@T
High frequency DC-DC converters
Half-bridge and Full-bridge DC-DC Converters
Full-bridge Inverters
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation ‡
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Power Dissipation
to Simplify Design, (See
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
IRFB59N10D
TO-220AB
V
100V
DSS
300 (1.6mm from case )
HEXFET
-55 to + 175
10 lbf•in (1.1N•m)
R
IRFS59N10D
Max.
236
200
± 30
3.8
1.3
3.3
DS(on)
59
42
D
0.025
2
Pak
®
IRFSL59N10D
Power MOSFET
IRFB59N10D
IRFS59N10D
max
IRFSL59N10D
PD - 93890
TO-262
Units
W/°C
V/ns
59A
°C
W
I
A
V
D
1
4/17/00

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IRFB59N10 Summary of contents

Page 1

... Notes  through ‡ are on page 11 www.irf.com SMPS MOSFET HEXFET V DSS 100V TO-220AB IRFB59N10D @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N• 93890 IRFB59N10D IRFS59N10D IRFSL59N10D ® Power MOSFET R max I DS(on) D 0.025 59A 2 D Pak TO-262 IRFS59N10D IRFSL59N10D Max ...

Page 2

IRFB/IRFS/IRFSL59N10D Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 100 5.5V 5.0V BOTTOM 4. 5.0V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ...

Page 4

IRFB/IRFS/IRFSL59N10D 100000 0V MHZ C iss = rss = oss = 10000 1000 100 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL ...

Page 6

IRFB/IRFS/IRFSL59N10D Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET ...

Page 8

IRFB/IRFS/IRFSL59N10D TO-220AB Package Outline Dimensions are shown in millimeters (inches (. (. (. (. ...

Page 9

D Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 ...

Page 10

IRFB/IRFS/IRFSL59N10D TO-262 Package Outline TO-262 Part Marking Information 10 www.irf.com ...

Page 11

D Pak Tape & Reel Information TIO ...

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