IRFH5300PBF International Rectifier, IRFH5300PBF Datasheet

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IRFH5300PBF

Manufacturer Part Number
IRFH5300PBF
Description
HEXFET Power MOSFET
Manufacturer
International Rectifier
Datasheet
1.IRFH5300PBF.pdf (8 pages)
Applications
•
•
Features and Benefits
www.irf.com
Features
Low R
Low Thermal Resistance to PCB (≤ 0.5°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Notes  through
Absolute Maximum Ratings
V
V
I
I
I
I
I
P
P
T
T
Orderable part number
IRFH5300TRPBF
IRFH5300TR2PBF
D
D
D
D
DM
J
STG
DS
GS
D
D
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Battery Operated DC Motor Inverter MOSFET
@ T
@ T
@ T
@ T
@T
@ T
A
A
C(Bottom)
C(Bottom)
DSon
A
(@T
C(Bottom)
= 25°C
= 70°C
= 25°C
(@V
R
Q
R
c(Bottom)
(≤ 1.4mΩ)
DS(on) max
G (typical)
= 25°C
= 100°C
g (typical)
= 25°C
GS
V
I
DS
D
= 10V)
†
= 25°C)
are on page 8
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Package Type
100
1.4
1.3
30
50
g
g
Parameter
g
m
nC
V
A
GS
GS
GS
GS
@ 10V
@ 10V
@ 10V
@ 10V
Tape and Reel
Tape and Reel
Form
results in Increased Power Density
Standard Pack
⇒
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
IRFH5300PbF
HEXFET
Quantity
Benefits
-55 to + 150
4000
400
100
100
0.029
Max.
± 20
400
250
3.6
30
40
32
h
h
®
PQFN 5X6 mm
Power MOSFET
www.DataSheet4U.com
Note
Units
W/°C
°C
W
V
A
1
9/17/09

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IRFH5300PBF Summary of contents

Page 1

... Tape and Reel Tape and Reel Parameter @ 10V GS @ 10V GS @ 10V GS @ 10V www.DataSheet4U.com IRFH5300PbF ® HEXFET Power MOSFET PQFN 5X6 mm Benefits Lower Conduction Losses Enable better thermal dissipation Increased Reliability ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Note ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

TOP 100 BOTTOM 10 2.7V ≤ 60μs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25°C 1 ...

Page 4

150°C 100 25°C 1 0.1 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 350 LIMITED BY PACKAGE 300 250 200 150 100 ...

Page 5

125° 25° Gate-to-Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage D.U ...

Page 6

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 16. DUT Fig 17. Gate Charge Test Circuit 6 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 7

PQFN 5x6 Outline "B" Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER ...

Page 8

... Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. ...

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