IRFH5301PBF International Rectifier, IRFH5301PBF Datasheet

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IRFH5301PBF

Manufacturer Part Number
IRFH5301PBF
Description
HEXFET Power MOSFET
Manufacturer
International Rectifier
Datasheet
www.irf.com
Applications
Features
Features and Benefits
V
V
I
I
I
I
I
P
P
T
T
Absolute Maximum Ratings
Notes  through
Low RDSon (<1.85mΩ)
Low Thermal Resistance to PCB (<1.1°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
D
D
D
D
DM
J
STG
DS
GS
D
D
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Battery Operated DC Motor Inverter MOSFET
Synchronous MOSFET for Buck Converters
@ T
@ T
@ T
@ T
@T
@T
A
A
C(Bottom)
C(Bottom)
A
C(Bottom)
(@T
IRFH5301TR2PBF
IRFH5301TRPBF
= 25°C
= 70°C
= 25°C
(@V
R
Q
R
c(Bottom)
DS(on) max
= 25°C
= 100°C
= 25°C
G (typical)
g (typical)
GS
V
I
DS
D
= 10V)
= 25°C)
are on page 8
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Package Type
100
1.85
PQFN 5mm x 6mm
PQFN 5mm x 6mm
1.5
30
37
g
g
Parameter
g
mΩ
nC
A
V
GS
GS
GS
GS
@ 10V
@ 10V
@ 10V
@ 10V
Tape and Reel
Tape and Reel
Form
results in Increased Power Density
Standard Pack
IRFH5301PbF
-55 to + 150
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
HEXFET
100
100
Max.
0.029
± 20
400
110
3.6
30
35
28
h
h
Quantity
4000
400
®
Power MOSFET
PQFN 5X6 mm
www.DataSheet4U.com
Note
Units
W/°C
°C
W
V
A
11/18/09
1

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IRFH5301PBF Summary of contents

Page 1

... PQFN 5mm x 6mm Tape and Reel Parameter @ 10V GS @ 10V GS @ 10V GS @ 10V www.DataSheet4U.com IRFH5301PbF ® HEXFET Power MOSFET PQFN 5X6 mm Benefits Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25° ...

Page 4

150°C 100 25°C 1 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 200 Limited By Package 160 120 ...

Page 5

125° 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage D.U ...

Page 6

SD • Fig 16. DUT Fig 17. Gate Charge Test Circuit 6 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current ...

Page 7

PQFN 5x6 Outline "B" Package Details http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER Note: For the most current drawing please refer to IR website at: www.irf.com ...

Page 8

... Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. ...

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