IRFIB5N50L International Rectifier, IRFIB5N50L Datasheet

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... T T ––– 99 150 nC T ––– 200 310 T ––– 360 540 ––– 6 Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) IRFIB5N50L ® Power MOSFET Trr I typ. typ. D 0.67Ω 73ns 4.7A TO-220 Full-Pak Units A W W/°C V V/ns °C ...

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Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

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VGS TOP 15V 12V 10V 10 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V 1 0.1 0.01 20µs PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ° ...

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0V MHZ C iss = SHORTED C rss = C gd 10000 C oss = iss 1000 C oss ...

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OPERATION IN THIS AREA LIMITED (on 25° 150°C Single Pulse 0 100 Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area ≤ 1 ≤ 0.1 ...

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D = 0.50 1 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6.0 5.0 4.0 3.0 2.0 -75 Fig 13. Threshold Voltage vs.Temperature 6 0.001 0.01 ...

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Fig 14. Maximum Avalanche Energy D.U 20V 0.01 Ω Fig 15a. Unclamped Inductive Test Circuit Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF ...

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D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 17. For N-Channel HEXFET 8 + • • ƒ • - „ • ...

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TO-220 Full-Pak Package Out line TO-220 Full-Pak Part Marking Information E XAMP I840G WIT CODE 3432 INT E R NAT IONAL ...