IRFIB5N65 International Rectifier, IRFIB5N65 Datasheet

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IRFIB5N65

Manufacturer Part Number
IRFIB5N65
Description
Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=5.1A)
Manufacturer
International Rectifier
Datasheet

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Absolute Maximum Ratings
Applications
Benefits
Typical SMPS Topologies
I
I
I
P
V
dv/dt
T
T
D
D
DM
www.irf.com
J
STG
D
GS
@ T
@ T
Notes
Drive Requirement
dv/dt Ruggedness
Avalanche Voltage and Current
@T
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and Dynamic
Fully Characterized Capacitance and
Single Transistor Flyback
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
High Voltage Isolation = 2.5KVRMS
Single Transistor Forward
C
C
C
= 25°C
= 100°C
= 25°C
through
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
are on page 8
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
650V
DSS
TO-220 Full-Pak
300 (1.6mm from case )
HEXFET
10 lbf•in (1.1N•m)
-55 to + 150
IRFIB5N65A
R
Max.
0.48
± 30
5.1
3.2
2.8
21
60
DS(on)
0.93
®
Power MOSFET
max
G
D
PD-91816B
S
Units
W/°C
V/ns
5.1A
6/21/00
°C
W
A
V
I
D
1

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IRFIB5N65 Summary of contents

Page 1

... T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torqe, 6- screw Typical SMPS Topologies Single Transistor Flyback Single Transistor Forward Notes through are on page 8 www.irf.com IRFIB5N65A SMPS MOSFET HEXFET V DSS 650V TO-220 Full-Pak @ 10V GS @ 10V GS - 150 300 (1.6mm from case ) 10 lbf• ...

Page 2

... IRFIB5N65A Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...

Page 3

... GS Fig 3. Typical Transfer Characteristics www.irf.com 100 TOP BOTTOM 10 1 ° 0 100 Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 = 100V 0.0 -60 -40 -20 8.0 9.0 Fig 4. Normalized On-Resistance IRFIB5N65A VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage ( 10V 100 120 140 160 ° ...

Page 4

... IRFIB5N65A rss rain-to-S ource V oltage ( Fig 5. Typical Capacitance Vs. ...

Page 5

... Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRFIB5N65A D.U. 10V µ d(off ...

Page 6

... IRFIB5N65A Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D ...

Page 7

... Ground Plane Low Leakage Inductance Current Transformer - - + dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® Power MOSFETs IRFIB5N65A + =10V ...

Page 8

... IRFIB5N65A TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) 1 0.60 (. 0. .54 (. TO-220 Full-Pak Part Marking Information ...

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